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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. V. Kozlovsky, O. Korolkov, K. S. Davydovskaja, A. A. Lebedev, M. E. Levinshteĭn, N. Sleptsuk, A. M. Strel'chuk, J. Toompuu, “Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 35–37   ; Tech. Phys. Lett., 46:3 (2020), 287–289 |
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2018 |
| 2. |
V. V. Kozlovsky, A. A. Lebedev, K. S. Davydovskaja, Yu. V. Lubimova, “Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1532–1534 ; Semiconductors, 52:12 (2018), 1635–1637 |
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2017 |
| 3. |
V. V. Kozlovsky, A. A. Lebedev, A. M. Strel'chuk, K. S. Davydovskaja, A. È. Vasil'ev, L. F. Makarenko, “Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 311–316 ; Semiconductors, 51:3 (2017), 299–304 |
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| 4. |
A. A. Lebedev, K. S. Davydovskaja, A. N. Yakimenko, A. M. Strel'chuk, V. V. Kozlovsky, “A study of the effect of electron and proton irradiation on 4$H$-SiC device structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 63–67 ; Tech. Phys. Lett., 43:11 (2017), 1027–1029 |
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