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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
M. S. Aksenov, N. A. Valisheva, A. P. Kovchavtsev, “The effect of fluorine on the density of states at the anodic oxide layer/In$_{0.53}$Ga$_{0.47}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021), 11–14 ; Tech. Phys. Lett., 47:6 (2021), 478–481 |
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2020 |
2. |
A. P. Kovchavtsev, M. S. Aksenov, A. E. Nastovjak, N. A. Valisheva, D. V. Gorshkov, G. Yu. Sidorov, D. V. Dmitriev, “Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 10–13 ; Tech. Phys. Lett., 46:5 (2020), 469–472 |
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2017 |
3. |
A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, A. P. Kovchavtsev, A. I. Toropov, I. D. Burlakov, K. O. Boltar, P. V. Vlasov, A. A. Lopukhin, “MBE-grown InSb photodetector arrays”, Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017), 900–904 ; Tech. Phys., 62:6 (2017), 915–919 |
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2016 |
4. |
V. S. Varavin, V. V. Vasilyev, A. A. Guzev, S. A. Dvoretskii, A. P. Kovchavtsev, D. V. Marin, I. V. Sabinina, Yu. G. Sidorov, G. Yu. Sidorov, A. V. Tsarenko, M. V. Yakushev, “CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1652–1656 ; Semiconductors, 50:12 (2016), 1626–1629 |
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2009 |
5. |
V. M. Bazovkin, A. P. Kovchavtsev, G. L. Kuryshev, A. A. Maslov, S. G. Mironov, D. V. Khotyanovsky, A. V. Tsarenko, I. S. Tsyryulnikov, “Effect of streamwise structures on heat transfer in a hypersonic flow in a compression corner”, Prikl. Mekh. Tekh. Fiz., 50:4 (2009), 112–120 ; J. Appl. Mech. Tech. Phys., 50:4 (2009), 638–645 |
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Organisations |
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