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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
V. P. Smagin, A. A. Isaeva, “Photoluminescence of low-dimensional polymethylmethacrylate/(Zn,Cd,Mn,Eu)S composite structures”, Zhurnal Tekhnicheskoi Fiziki, 91:5 (2021), 808–814 ; Tech. Phys., 66:6 (2021), 798–804 |
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V. P. Smagin, A. A. Isaeva, “Photoluminescence of poly(methyl methacrylate) / [(Zn,Cd)S : Mn,Cu,Eu] composites”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 46–50 ; Tech. Phys. Lett., 47:11 (2021), 818–822 |
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2020 |
3. |
V. P. Smagin, L. V. Zatonskaya, E. G. Ilina, E. P. Harnutova, “Photoluminescence of polymethylmethacrylate/(Zn, Cu, Ag)S : Eu$^{3+}$ compositions”, Fizika Tverdogo Tela, 62:7 (2020), 1074–1081 ; Phys. Solid State, 62:7 (2020), 1214–1221 |
4. |
V. P. Smagin, A. P. Khudyakov, A. A. Birykov, “Luminescence of Eu$^{3+}$ ions in a matrix of a fluorinated yttrium–aluminum composition”, Fizika Tverdogo Tela, 62:2 (2020), 274–280 ; Phys. Solid State, 62:2 (2020), 325–331 |
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5. |
V. P. Smagin, A. A. Isaeva, N. S. Eremina, “Photoluminescence of Zn$_{1-x-y}$Cu$_{x}$Eu$_{y}$S/EuL$_{3}$ quantum dots in a polyacrylate matrix”, Optics and Spectroscopy, 128:5 (2020), 651–658 ; Optics and Spectroscopy, 128:5 (2020), 656–663 |
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A. A. Isaeva, V. P. Smagin, “Synthesis and photoluminescence of nanostructures based on zinc, cadmium, and manganese sulfides in a polyacrylate matrix”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1321–1330 ; Semiconductors, 54:12 (2020), 1583–1592 |
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A. A. Isaeva, V. P. Smagin, “Photoluminescence of (Zn,Pb,Mn)S quantum dots in polyacrylate matrix”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 435–440 ; Semiconductors, 54:5 (2020), 511–517 |
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2018 |
8. |
V. P. Smagin, N. S. Eremina, A. G. Skachkov, “Luminescence of CdS : Ag quantum dots in a polymethacrylate matrix”, Optics and Spectroscopy, 124:5 (2018), 635–639 ; Optics and Spectroscopy, 124:5 (2018), 668–672 |
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V. P. Smagin, N. S. Eremina, M. S. Leonov, “Photoluminescence of ZnS : Cu in a polymethyl methacrylate matrix”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 891–895 ; Semiconductors, 52:8 (2018), 1022–1026 |
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