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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
Sanjay, B. Prasad, A. Vohra, “Performance evaluation of inversion mode and junctionless dual-material double-surrounding gate Si nanotube MOSFET for 5-nm gate length”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 355  ; Semiconductors, 55:12 (2021), 936–942 |
| 2. |
B. Singh, B. Prasad, D. Kumar, “Silicon nanowire parameter extraction using DFT and comparative performance analysis of SiNWFET and CNTFET devices”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 83 ; Semiconductors, 55:1 (2021), 100–107 |
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2020 |
| 3. |
Sanjay, B. Prasad, A. Vohra, “Dual material gate engineering to reduce DIBLl in cylindrical gate all around Si nanowire MOSFET for 7-nm gate length”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1250 ; Semiconductors, 54:11 (2020), 1490–1495 |
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