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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
V. I. Egorkin, V. E. Zemlyakov, A. V. Nezhentsev, A. A. Zaitsev, V. I. Garmash, “Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1260–1263   |
| 2. |
V. I. Egorkin, S. V. Obolensky, V. E. Zemlyakov, A. A. Zaitsev, V. I. Garmash, “Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 15–17 |
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2020 |
| 3. |
V. I. Garmash, V. E. Zemlyakov, V. I. Egorkin, A. V. Kovalchuk, S. Yu. Shapoval, “Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 748–752 ; Semiconductors, 54:8 (2020), 895–899 |
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