|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
A. I. Okhapkin, S. A. Kraev, E. A. Arkhipova, V. M. Daniltsev, O. I. Khrykin, P. A. Yunin, M. N. Drozdov, “Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 837–840   ; Semiconductors, 55:11 (2021), 865–868 |
|
2020 |
| 2. |
Yu. N. Drozdov, S. A. Kraev, A. I. Okhapkin, V. M. Daniltsev, E. V. Skorokhodov, “Features of the vapor-phase epitaxy of GaAs on nonplanar substrates”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 958–961 ; Semiconductors, 54:9 (2020), 1147–1149 |
|
2019 |
| 3. |
N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, V. L. Kryukov, E. V. Skorokhodov, S. S. Strelchenko, V. I. Shashkin, “Vertical field-effect transistor with control $p$–$n$-junction based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1311–1314 ; Semiconductors, 53:10 (2019), 1279–1281 |
|
2017 |
| 4. |
M. N. Drozdov, V. M. Daniltsev, Yu. N. Drozdov, O. I. Khrykin, P. A. Yunin, “Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017), 50–59 ; Tech. Phys. Lett., 43:5 (2017), 477–480 |
1
|
|
2016 |
| 5. |
V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, Yu. N. Drozdov, S. A. Kraev, E. A. Surovegina, V. I. Shashkin, P. A. Yunin, “Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1459–1462 ; Semiconductors, 50:11 (2016), 1439–1442 |
3
|
|
| Organisations |
|
| |
|
|
Contact us: