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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
M. G. Verkholetov, I. A. Prudaev, “Effect of barrier contacts on carrier transport in homogeneous GaAs structures doped with deep Cr and EL$_2$ centers”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 693–698 ; Semiconductors, 55:9 (2021), 705–709 |
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2019 |
2. |
I. A. Prudaev, M. G. Verkholetov, “Nonlinearity of current-voltage characteristics of homogeneous compensated GaAs detector structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 37–40 ; Tech. Phys. Lett., 45:6 (2019), 566–569 |
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2018 |
3. |
I. A. Prudaev, M. G. Verkholetov, A. D. Koroleva, O. P. Tolbanov, “Charge carrier transport and deep levels recharge in avalanche $S$-diodes based on GaAs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018), 21–29 ; Tech. Phys. Lett., 44:6 (2018), 465–468 |
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Organisations |
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