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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
I. E. Tyschenko, M. Voelskow, Si. Zh, V. P. Popov, “Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 217–223   ; Semiconductors, 55:3 (2021), 289–295 |
| 2. |
I. E. Tyschenko, R. Zhang, “Structural and optical-phonon properties of InSb nanocrystals synthesized in Si and SiO$_2$ matrices”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 59–68 ; Semiconductors, 55:1 (2021), 76–85 |
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2019 |
| 3. |
I. E. Tyschenko, M. Voelskow, A. N. Mikhaylov, D. I. Tetelbaum, “Diffusion and interaction of In and As implanted into SiO$_2$ films”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1023–1029 ; Semiconductors, 53:8 (2019), 1004–1010 |
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| 4. |
I. E. Tyschenko, V. A. Volodin, V. P. Popov, “Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 502–507 ; Semiconductors, 53:4 (2019), 493–498 |
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| 5. |
I. E. Tyschenko, I. V. Popov, E. V. Spesivtsev, “Anodic oxidation of hydrogen-transferred silicon-on-insulator layers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 253–257 ; Semiconductors, 53:2 (2019), 241–245 |
| 6. |
I. E. Tyschenko, E. D. Zhanaev, V. P. Popov, “Bonding energy of silicon and sapphire wafers at elevated temperatures of joining”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 65–69 ; Semiconductors, 53:1 (2019), 60–64 |
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2018 |
| 7. |
I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin, “Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 280–284 ; Semiconductors, 52:2 (2018), 268–272 |
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2017 |
| 8. |
I. E. Tyschenko, A. G. Cherkov, “Diffusion-Controlled growth of Ge nanocrystals in SiO$_{2}$ films under conditions of ion synthesis at high pressure”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1414–1419 ; Semiconductors, 51:10 (2017), 1364–1369 |
| 9. |
I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow, “Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1289–1294 ; Semiconductors, 51:9 (2017), 1240–1246 |
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