|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
1. |
S. M. Afanas'ev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film”, Fizika Tverdogo Tela, 63:11 (2021), 1895–1900 |
2. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer
Ba$_{x}$Sr$_{1-x}$TiO$_{3}$”, Fizika Tverdogo Tela, 63:11 (2021), 1887–1889 |
3. |
D. A. Belorusov, E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 24–27 ; Semiconductors, 55:1 (2021), 21–24 |
3
|
|
2020 |
4. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1219–1223 ; Semiconductors, 54:11 (2020), 1445–1449 |
|
Organisations |
|
|
|
|