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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
M. M. Sobolev, F. Yu. Soldatenkov, “Capacitance spectroscopy of heteroepitaxial AlGaAs/GaAs $p$–$i$–$n$ structures”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1072–1078   ; Semiconductors, 54:10 (2020), 1260–1266 |
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2019 |
| 2. |
M. M. Sobolev, D. A. Yavsin, S. A. Gurevich, “Impact of percolation effect on temperature dependences of the capacitance-voltage characteristics of heterostructures based on composite layers of silicon and gold nanoparticles”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1431–1436 ; Semiconductors, 53:10 (2019), 1393–1397 |
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2018 |
| 3. |
M. M. Sobolev, F. Yu. Soldatenkov, “Effect of dislocation-related deep levels in heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs $p$–$i$–$n$ structures on the relaxation time of nonequilibrium carriers”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 177–183 ; Semiconductors, 52:2 (2018), 165–171 |
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| 4. |
M. M. Sobolev, O. S. Ken, O. M. Sreseli, D. A. Yavsin, S. A. Gurevich, “Spatial and quantum confinement of Si nanoparticles deposited by laser electrodispersion onto crystalline Si”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018), 30–38 ; Tech. Phys. Lett., 44:4 (2018), 287–290 |
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2016 |
| 5. |
M. M. Sobolev, F. Yu. Soldatenkov, V. A. Kozlov, “Study of deep levels in GaAs $p$–$i$–$n$ structures”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 941–945 ; Semiconductors, 50:7 (2016), 924–928 |
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1984 |
| 6. |
M. M. Sobolev, S. G. Konnikov, M. N. Stepanova, “Electron-Probe Study of Deep Centers in Undoped GaAs”, Fizika i Tekhnika Poluprovodnikov, 18:2 (1984), 383–385 |
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