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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, “Epitaxial growth of zinc sulfide by atomic layer deposition on SiC/Si hybrid substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 11–14   ; Tech. Phys. Lett., 45:11 (2019), 1075–1077 |
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2018 |
| 2. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, V. P. Rubets, “Epitaxial growth of cadmium selenide films on silicon with a silicon carbide buffer layer”, Fizika Tverdogo Tela, 60:3 (2018), 499–504 ; Phys. Solid State, 60:3 (2018), 504–509 |
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| 3. |
A. P. Belyaev, V. V. Antipov, V. P. Rubets, “Study of the structure of cadmium-sulfide nanowire crystals synthesized by vacuum evaporation and condensation in a quasi-closed volume”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 125–126 ; Semiconductors, 52:1 (2018), 118–119 |
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2017 |
| 4. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, “Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer”, Fizika Tverdogo Tela, 59:2 (2017), 385–388 ; Phys. Solid State, 59:2 (2017), 399–402 |
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| 5. |
A. P. Belyaev, V. P. Rubets, V. V. Antipov, “Influence of temperature on the rhombic shape of paracetamol molecular crystals”, Zhurnal Tekhnicheskoi Fiziki, 87:4 (2017), 624–626 ; Tech. Phys., 62:4 (2017), 645–647 |
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2016 |
| 6. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, “Epitaxial growth of cadmium sulfide films on silicon”, Fizika Tverdogo Tela, 58:3 (2016), 612–615 ; Phys. Solid State, 58:3 (2016), 629–632 |
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| 7. |
A. P. Belyaev, V. V. Antipov, V. P. Rubets, “Formation of cadmium-sulfide nanowhiskers via vacuum evaporation and condensation in a quasi-closed volume”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 420–422 ; Semiconductors, 50:3 (2016), 415–417 |
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2012 |
| 8. |
A. P. Belyaev, V. P. Rubets, V. V. Antipov, N. S. Bordey, “About mechanism of initial stage of formation of nanostructures in the conditions of super-low temperatures”, Nanosystems: Physics, Chemistry, Mathematics, 3:5 (2012), 103–110 |
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