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Publications in Math-Net.Ru |
Citations |
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1987 |
| 1. |
M. I. Vasilevskii, V. A. Panteleev, “Electrically inactive fraction of the shallow impurity in silicon”, Fizika Tverdogo Tela, 29:10 (1987), 3072–3076  |
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1986 |
| 2. |
V. A. Panteleev, M. I. Vasilevskii, G. M. Golemshtok, V. I. Okulich, “Defect interaction in the phosphorus diffusion in silicon”, Fizika Tverdogo Tela, 28:10 (1986), 3226–3228 |
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1985 |
| 3. |
V. M. Vorob'ev, V. A. Murav'ev, V. A. Panteleev, “Migration mechanism of amphoteric impurities in $\mathrm{A}_{3}\mathrm{B}_{5}$ compounds”, Fizika Tverdogo Tela, 27:9 (1985), 2568–2572 |
| 4. |
M. I. Vasilevskii, S. N. Ershov, V. A. Panteleev, “Uniform-distribution instability of displacive charged impurity in semiconductors”, Fizika Tverdogo Tela, 27:8 (1985), 2282–2285 |
| 5. |
A. S. Vasin, V. I. Okulich, V. A. Panteleev, D. I. Tetelbaum, “Pressure effect on recrystallization rate of amorphous silicon layer at postimplantation annealing”, Fizika Tverdogo Tela, 27:1 (1985), 274–277 |
| 6. |
M. I. Vasilevskii, G. M. Golemshtok, V. A. Panteleev, “Effects of intrinsic elastic stresses and phonon spectrum distortions on defect-formation and diffusion in semiconductors”, Fizika Tverdogo Tela, 27:1 (1985), 126–132 |
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1984 |
| 7. |
V. M. Vorob'ev, L. N. Karpova, V. A. Murav'ev, V. A. Panteleev, “Atom jump activation energy to next neighbor coordination in semiconductors”, Fizika Tverdogo Tela, 26:5 (1984), 1277–1280 |
| 8. |
M. I. Vasilevskii, V. A. Panteleev, “Intrinsic electric field effect on diffusion of fifth group elements in silicon”, Fizika Tverdogo Tela, 26:1 (1984), 60–64 |
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1983 |
| 9. |
V. M. Vorob'ev, V. A. Murav'ev, V. A. Panteleev, “Microkinetics of two-component diffusion in semiconductors”, Fizika Tverdogo Tela, 25:10 (1983), 3132–3137 |
| 10. |
V. A. Panteleev, M. I. Vasilevskii, Yu. L. Kalinkin, “Microscopic analysis of the elastic stress effect on displacive impurity atom migration in silicon”, Fizika Tverdogo Tela, 25:10 (1983), 2930–2935 |
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| Organisations |
- Gor'kii State University named after N. I. Lobachevskogo
- Gor'kii Research Institute of Physics and Technology
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