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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
V. I. Borisov, A. T. Gorelenok, S. G. Dmitriev, V. E. Lyubchenko, D. N. Rehviashvili, A. S. Rogashkov, “Диоды Ганна на основе гетероструктуры
$n$-InGaAs$/n^{+}$-InP”, Fizika i Tekhnika Poluprovodnikov, 26:4 (1992), 611–613  |
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1991 |
| 2. |
A. T. Gorelenok, D. N. Rehviashvili, M. Y. Nadtochii, V. M. Ustinov, “In$_{0.53}$Ga$_{0.47}$As/In$_{0.88}$Ga$_{0.12}$As$_{0.23}$P$_{0.77}$-гетероструктуры с двумерным электронным газом”, Fizika i Tekhnika Poluprovodnikov, 25:5 (1991), 908–912 |
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1990 |
| 3. |
A. T. Gorelenok, D. N. Rehviashvili, M. Y. Nadtochii, V. M. Ustinov, “2-DIMENSIONAL ELECTRON-GAS IN IN0.88GA0.12AS0.23P0.77/IN0.53GA0.47AS
HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990), 47–50 |
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1988 |
| 4. |
Z. I. Alferov, V. I. Bosyi, A. T. Gorelenok, A. V. Ivashchuk, N. D. Il'inskaya, M. N. Mizerov, I. A. Mokina, D. N. Rehviashvili, N. M. Shmidt, “SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988), 1807–1810 |
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1987 |
| 5. |
A. T. Gorelenok, V. V. Mamutin, D. V. Pulyaevskii, D. N. Rehviashvili, N. M. Shmidt, “Study of Minority-Carrier Lifetime in the Narrow-Band Region of Diode InGaAsP/InP Structures”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1498–1501 |
| 6. |
Z. V. Dzhibuti, N. D. Dolidze, G. L. Ofengeim, D. N. Rehviashvili, T. S. Cholokashvili, “IR Absorption of Gallium Arsenide Irradiated at 77 K”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 930–932 |
| 7. |
L. A. Volkov, A. T. Gorelenok, V. N. Luk'yanov, I. A. Rachkov, D. N. Rehviashvili, N. M. Shmidt, S. D. Yakubovich, “Determination of AFC of fast-response photodetectors using the homodyne glass-fiber diagram of optical signal amplitude pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987), 1059–1062 |
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