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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
O. V. Smol'skii, A. L. Shmaev, D. V. Sinyavskii, V. N. Vasilev, D. V. Denisov, V. V. Tretyakov, “PREPARATION OF Y-BA-CU-O HTSC-FILMS ON SI BY THE MOLECULAR-BEAM EPITAXY
TECHNIQUE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:20 (1992), 85–89  |
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1990 |
| 2. |
V. G. Antipov, S. A. Nikishin, V. N. Svetlov, D. V. Sinyavskii, O. V. Smol'skii, V. A. Spirenkov, “EVOLUTION OF THE (OO)-REFLEX OF THE RFED PICTURE AT THE INITIAL-STAGES
OF GAAS(001) MBE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990), 41–46 |
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1987 |
| 3. |
V. I. Gladuschak, S. Yu. Karpov, V. I. Kuchinskii, V. M. Lantratov, S. A. Nikishin, D. V. Sinyavskii, V. B. Smirnitskiĭ, O. V. Smol'skii, “Low-threshold injection heterolasers with electric limits developed by the pulse laser effect”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987), 913–918 |
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1985 |
| 4. |
I. I. Reshina, O. V. Smol'skii, A. N. Vasil'ev, “Raman Scattering in Gallium Arsenide Crystals Exposed to Subnanosecond Laser Pulses”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 252–256 |
| 5. |
M. Yu. Aver'yanova, Yu. V. Koval'chuk, Yu. V. Pogorel'skii, O. V. Smol'skii, “Dynamics of reflection coefficients of crystal $Si$ and $Ga\,As$ induced by picosecond laser-pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985), 761–765 |
| 6. |
E. V. Kalinina, Yu. V. Koval'chuk, G. V. Prishepa, O. V. Smol'skii, “Ultrashort laser-pulse effect on electrophysical properties of silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985), 669–671 |
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1984 |
| 7. |
B. G. Zakharov, M. V. Koval'chuk, Yu. V. Koval'chuk, A. S. Semiletov, O. V. Smol'skii, E. A. Sozontov, “STANDING X-RAY WAVE TECHNIQUE IN THE INVESTIGATION OF THE
GALLIUM-ARSENIDE LASER AMORPHISM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984), 1402–1405 |
| 8. |
E. N. Arutunov, A. N. Vasil'ev, Y. N. Kovalchuk, Yu. V. Pogorel'skii, I. I. Reshina, O. V. Smol'skii, “LAYERED STRUCTURE FORMATION IN THE ION-IMPLANTED GAAS UNDER THE SINGLE
SUBNANOSECOND LASER-PULSE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984), 1281–1286 |
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1983 |
| 9. |
Z. I. Alferov, Yu. V. Koval'chuk, Yu. V. Pogorel'skii, O. V. Smol'skii, I. A. Sokolov, “Новый фазовый переход в SiC и GaAs под действием пикосекундных
лазерных импульсов”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983), 1373–1376 |
| 10. |
E. N. Arutunov, Yu. V. Koval'chuk, Yu. V. Pogorel'skii, E. L. Portnoĭ, O. V. Smol'skii, “О возможностях метода фотолюминесценции в исследовании лазерной
аморфизации арсенида галлия”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983), 1298–1301 |
| 11. |
Z. I. Alferov, Yu. V. Koval'chuk, O. V. Smol'skii, I. A. Sokolov, “Аморфизация монокристаллического арсенида галлия под действием
пикосекундных световых импульсов”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983), 897–900 |
| 12. |
Yu. V. Koval'chuk, E. L. Portnoĭ, B. I. Skopina, V. B. Smirnitskiĭ, O. V. Smol'skii, I. A. Sokolov, “Эпитаксиальная кристаллизация напыленных слоев кремния на подложках
GaP в условиях интерференционного лазерного отжига”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983), 850–853 |
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