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Publications in Math-Net.Ru |
Citations |
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1988 |
| 1. |
A. V. Markov, È. M. Omel'yanovskii, V. B. Osvenskii, A. Ya. Polyakov, I. A. Kovalchuk, V. I. Raihshtein, M. V. Tishkin, “Влияние дислокаций на распределение глубоких центров
в полуизолирующем GaAs”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 44–48  |
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1987 |
| 2. |
A. V. Govorkov, È. M. Omel'yanovskii, A. Ya. Polyakov, V. I. Raihshtein, V. A. Fridman, “New method for investigation of microheterogeneity of local centers in high-ohmic semiconductor-materials using the REM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:7 (1987), 385–388 |
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1986 |
| 3. |
È. M. Omel'yanovskii, A. Ya. Polyakov, N. S. Rytova, V. I. Raihshtein, “On the Determination of Deep-Center Parameters in High-Resistance Semiconductors by Photoelectric Relaxation Spectroscopy of
Deep Levels”, Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1428–1432 |
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1985 |
| 4. |
V. A. Kurbatov, È. M. Omel'yanovskii, A. Ya. Polyakov, V. I. Raihshtein, V. V. Karataev, A. Ya. Nashel'skii, S. V. Yakobson, “Absorption of Energy Quanta Less than Optical
Energy of Impurity Ionization in
Manganese-Doped Indium Phoshidae”, Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1763–1767 |
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1984 |
| 5. |
V. V. Voronkov, G. I. Voronkova, V. P. Kalinushkin, D. I. Murin, È. M. Omel'yanovskii, L. Ya. Pervova, A. M. Prokhorov, V. I. Raihshtein, “Новый тип примесных дефектов в полуизолирующем арсениде галлия”, Fizika i Tekhnika Poluprovodnikov, 18:8 (1984), 1363–1366 |
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