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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
V. V. Vorob'eva, O. V. Zushinskaya, V. Lebedev, LeTuan, S. V. Novikov, T. A. Polyanskaya, I. G. Savelev, Yu. V. Shmartsev, “Электрофизические параметры слоев GaAs, выращенных ЖФЭ
из растворов$-$расплавов в галлии и висмуте при различных потоках водорода”, Fizika i Tekhnika Poluprovodnikov, 25:10 (1991), 1758–1764  |
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1990 |
| 2. |
Yu. F. Birulin, V. V. Vorob'eva, S. V. Novikov, D. N. Shelkovnikov, “Двойное легирование эпитаксиального GaAs изовалентной примесью —
висмутом и акцепторной примесью — цинком”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2217–2219 |
| 3. |
V. V. Vorob'eva, A. M. Kreschuk, T. L. Makarova, S. V. Novikov, K. Yu. Pogrebickii, I. G. Savelev, “Изучение переходной области между эпитаксиальными слоями
InP и In$_{0.53}$Ga$_{0.47}$As в гетероструктурах с 2МЭГ”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1026–1030 |
| 4. |
N. A. Bert, V. V. Vorob'eva, M. V. Vorontsova, A. M. Kreschuk, S. V. Novikov, K. Yu. Pogrebickii, I. G. Savelev, D. Zh. Saifidinov, I. P. Soshnikov, A. Ya. Shik, “Влияние толщины верхнего узкозонного слоя на концентрацию двумерных
электронов в инвертированных гетероструктурах InP/In$_{0.53}$Ga$_{0.47}$As”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 653–659 |
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1989 |
| 5. |
V. V. Vorob'eva, O. V. Zushinskaya, S. V. Novikov, I. G. Savelev, V. V. Chaldyshev, “DOUBLE ISOVALENT ALLOYING OF GALLIUM-ARSENIDE BY BISMUTH AND INDIUM”, Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989), 164–167 |
| 6. |
V. V. Vorob'eva, M. V. Egorova, A. M. Kreschuk, S. V. Novikov, I. G. Savelev, “Легирование слоев In$_{0.53}$Ga$_{0.47}$As самарием”, Fizika i Tekhnika Poluprovodnikov, 23:9 (1989), 1699–1701 |
| 7. |
V. V. Vorob'eva, M. V. Egorova, A. M. Kreshchuk, S. V. Novikov, I. G. Savelev, I. I. Saidashev, “TWO-DIMENSIONAL ELECTRONIC GAS STRUCTURES IN THE INP/INGAAS SYSTEM
OBTAINED BY THE LPE (LIQUID PHASE EPITAXY) TECHNIQUE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:11 (1989), 73–77 |
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1988 |
| 8. |
V. M. Amusya, Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Зависимость ширины запрещенной зоны от состава в твердом растворе
InP$_{1-x}$Sb$_{x}$ (${x\leqslant 0.07}$)”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 342–344 |
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1987 |
| 9. |
Yu. F. Birulin, V. V. Vorob'eva, V. G. Golubev, L. V. Golubev, V. I. Ivanov-Omskii, S. V. Novikov, A. V. Osutin, I. G. Savelev, V. V. Chaldyshev, Yu. V. Shmartsev, O. V. Yaroshevich, “Mechanism of «Purification» of Gallium Arsenide by Bismuth”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2201–2209 |
| 10. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Photoluminescence of germanium-alloyed and bismuth-alloyed $Ga\,As$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1264–1267 |
| 11. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, T. V. Cherneva, Yu. V. Shmartsev, “Solid-solution in the indium phosphide–indium antimonide system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 188–191 |
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1985 |
| 12. |
V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, Yu. V. Shmartsev, “Electro-liquid epitaxy of the 4-component $Ga\,As_{1-x-y}\,Sb_{x}\,P_{y}$ solid-solution”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 224–226 |
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1984 |
| 13. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, Yu. V. Shmartsev, “STRUCTURE CONTROL IN THE ELECTROLIQUID EPITAXY METHOD”, Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984), 1394–1399 |
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