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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
I. M. Grodnenskiĭ, Y. M. Dikaev, A. S. Rudenko, K. V. Starostin, M. L. Yassen, B. K. Medvedev, V. G. Mokerov, Yu. V. Slepnev, “Множественная полосковая структура с квазиодномерным электронным
энергетическим спектром”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1521–1528  |
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1990 |
| 2. |
V. N. Lutskii, B. K. Medvedev, V. G. Mokerev, A. S. Rylik, Yu. V. Slepnev, S. S. Shmelev, V. S. Shubin, “RESONANCE TUNNELING OF ELECTRONS IN GAAS-ALAS-BASED 2-BARRIER STRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990), 12–15 |
| 3. |
B. K. Medvedev, V. G. Mokerov, Yu. V. Slepnev, A. A. Kal'fa, A. R. Kryukov, “RESONANCE TUNNELING IN 2-BARRIER STRUCTURE DIODES ON SEMI-INSULATING
SUBSTRATE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990), 76–78 |
| 4. |
B. K. Medvedev, V. P. Garanin, V. B. Kopylov, V. G. Mokerov, Yu. V. Slepnev, A. L. Kuznetsov, “NEW EPITAXIAL STRUCTURE FOR ARSENIDE-GALLIUM DEVICES ON SILICON
SUBLAYERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:11 (1990), 48–52 |
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1986 |
| 5. |
E. A. Il'ichev, S. K. Maksimov, E. N. Nagdaev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “CHARACTERISTICS OF ELECTROPHYSICAL AND STRUCTURAL-PROPERTIES OF
INSULATING LAYERS IN THE GAAS-ALAS SYSTEM OBTAINED BY THE HYDRID MOS
METHOD”, Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986), 2245–2247 |
| 6. |
S. M. Afanasev, E. A. Il'ichev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, B. V. Strizhkov, “Influence of Composition on Electrohysical Properties of Al$_{x}$Ga$_{1-x}$As Insulating Layers Produced by MOC Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1565–1571 |
| 7. |
E. A. Il'ichev, Yu. P. Masloboev, V. M. Maslovskii, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “Trapping of Carriers in Insulator–Semiconductor Structures Produced by MOS Hydride Method in the GaAs-AlAs System”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 757–759 |
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1984 |
| 8. |
E. A. Il'ichev, Yu. P. Masloboev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “FIELD TRANSISTOR WITH INSULATED SEALS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984), 420–422 |
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