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Publications in Math-Net.Ru |
Citations |
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1988 |
| 1. |
A. B. Gerasimov, M. K. Gogotishvili, Z. V. Dzhibuti, B. M. Konovalenko, “О механизмах перестройки комплексов в полупроводниках”, Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 920–922  |
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1986 |
| 2. |
A. B. Gerasimov, M. K. Gogotishvili, B. M. Konovalenko, “On the Dependence of Annealing Temperature of Impurity Atom–Vacancy Defects on the Type of Impurity”, Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 1980–1983 |
| 3. |
A. B. Gerasimov, M. K. Gogotishvili, B. M. Konovalenko, “Effect of Atom-Lattice Bond Energy on the Kinetics of Radiation-Induced Defect Annealing in $p$-Type Germanium”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 794–798 |
| 4. |
A. B. Gerasimov, M. K. Gogotishvili, B. M. Konovalenko, “On the Mechanism of the Effect of Impurity Type and Concentration on Annealing Kinetics in Irradiated Germanium”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 641–644 |
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1983 |
| 5. |
A. B. Gerasimov, Z. G. Gogua, A. A. Tsertsvadze, “Variational Feinman method calculation of shallow and deep impurity states in $\mathrm{Ge}$ and $\mathrm{Si}$”, Fizika Tverdogo Tela, 25:3 (1983), 746–750 |
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