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Publications in Math-Net.Ru |
Citations |
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1987 |
| 1. |
A. M. Grekhov, V. M. Gunko, V. I. Shakhovtsov, “Study of Electronic Structure of Isoelectronic Impurities in Silicon. C, Ge Atoms and Their Complexes with Vacancies”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1837–1841  |
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1986 |
| 2. |
V. M. Gunko, R. V. Smirnova, “HETEROGENEITY IN THE SMOOTH AND DEVELOPED ELECTRODE OUTCOME IN
LOW-VOLTAGE DISCHARGE PLASMA”, Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986), 1118–1124 |
| 3. |
A. M. Grekhov, V. M. Gunko, “Relaxation of Split-Bond Local Environment in Amorphous Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 952–953 |
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1985 |
| 4. |
A. M. Grekhov, V. M. Gunko, G. M. Klapchenko, Yu. P. Tsyashchenko, “Relaxation of vacancy local structure saturated with hydrogen in silicon”, Fizika Tverdogo Tela, 27:1 (1985), 285–287 |
| 5. |
A. M. Grekhov, V. M. Gunko, “Calculation
of the Effect of Disorder on
Amorphous-Silicon Optical Constants”, Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1892–1893 |
| 6. |
A. M. Grekhov, V. M. Gunko, “Calculation of Variations of Optical Parameters
and Electron Structure under Amorphous-Silicon Hydrogenation”, Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1889–1891 |
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1983 |
| 7. |
A. M. Grekhov, V. M. Gunko, G. M. Klapchenko, Yu. P. Tsyashchenko, “Энергетические уровни пар фосфора и бора в аморфном кремнии”, Fizika i Tekhnika Poluprovodnikov, 17:11 (1983), 2088–2090 |
| 8. |
A. M. Grekhov, V. M. Gunko, G. M. Klapchenko, Yu. P. Tsyashchenko, “Влияние водорода на оборванные связи в кремнии”, Fizika i Tekhnika Poluprovodnikov, 17:10 (1983), 1859–1861 |
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