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Publications in Math-Net.Ru |
Citations |
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1990 |
| 1. |
A. P. Krokhmal, V. P. Koshelenko, “Влияние эффектов легирования на экситоны, связанные с нейтральными
донорами, в $6H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 669–672  |
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1989 |
| 2. |
I. S. Gorban, A. P. Krokhmal, I. A. Rozhko, “Deformation potentials and valence band symmetry in $6H\mathrm{SiC}$”, Fizika Tverdogo Tela, 31:12 (1989), 126–131 |
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1987 |
| 3. |
I. S. Gorban, A. P. Krokhmal, V. I. Levin, A. S. Skirda, Yu. M. Tairov, V. F. Cvetkov, “Impurity Optical Absorption and Energy Structure of Donor $1s$ States in $4H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 194–197 |
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1986 |
| 4. |
I. S. Gorban, A. P. Krokhmal, “Absorption spectrum of the excitons bound to neutral boron atoms in cubic silicon carbide”, Fizika Tverdogo Tela, 28:8 (1986), 2285–2289 |
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