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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
E. V. Vinnik, K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Влияние облучения быстрыми нейтронами на люминесценцию арсенида
галлия”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 82–87  |
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1990 |
| 2. |
E. V. Vinnik, K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Понижение термической стабильности
комплексов $V_{\text{As}}$Zn$_{\text{Ga}}$ в GaAs при нейтронном облучении”, Fizika i Tekhnika Poluprovodnikov, 24:8 (1990), 1363–1366 |
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1987 |
| 3. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “${h\nu_{m}\simeq 1.2}$ eV Luminescence Band in $p$-Type GaAs Stimulated by Radiationally-Thermal Effect”, Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1659–1663 |
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1986 |
| 4. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Effect of Fast-Electron Irradiation on the Luminescence of $p$-Type GaAs (Si) Heavily Doped and Compensated Layers”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1874–1877 |
| 5. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Interaction of Radiation-Induced Defects with Chromium Atoms in Gallium Arsenide”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 567–569 |
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1985 |
| 6. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Variation of Maximum Position and Half width of Luminescence Band due to Radiative
Recombination in $V_{\text{Ga}}$Te$_{\text{As}}$ Complexes under Electron Irradiation
of GaAs”, Fizika i Tekhnika Poluprovodnikov, 19:7 (1985), 1326–1328 |
| 7. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Increase of Concentration of Luminescence-Quenching
Centers under the Annealing of Electron-Irradiated Gallium-Arsenide Crystals”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1163–1164 |
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