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Publications in Math-Net.Ru |
Citations |
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1989 |
| 1. |
V. D. Skupov, G. A. Tsypkin, V. G. Shengurov, “Влияние гидростатического давления на характеристики диодов
с барьером Шоттки”, Fizika i Tekhnika Poluprovodnikov, 23:3 (1989), 554–556  |
| 2. |
V. D. Skupov, D. I. Tetelbaum, G. V. Shengurov, “INFLUENCE OF EXTENDED DEFECTS IN ORIGINAL CRYSTALS ON THE REMOTE-CONTROL
EFFECT UNDER IONIC IMPLANTATION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:22 (1989), 44–47 |
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1988 |
| 3. |
Yu. A. Semin, V. D. Skupov, D. I. Tetelbaum, “INTENSIFICATION OF ELASTIC-WAVES GENERATED BY ION BOMBARDING DURING
DISTRIBUTION IN CRYSTALS WITH CLUSTER DEFECTS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988), 273–276 |
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1987 |
| 4. |
V. D. Skupov, D. I. Tetelbaum, “On the Effect of Elastic Stresses on the Transformation of Defect Accumulations in Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1495–1497 |
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1986 |
| 5. |
Yu. V. Pavlov, Yu. A. Semin, V. D. Skupov, D. I. Tetelbaum, “Effect of Elastic Waves Arising under Ionic Bombardment on Structure Perfection of Semiconductor Crystals”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 503–507 |
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1985 |
| 6. |
N. P. Morozov, V. D. Skupov, D. I. Tetelbaum, “Defect Formation in Silicon under Ion Bombardment beyond the Limits of Ion-Parth Range”, Fizika i Tekhnika Poluprovodnikov, 19:3 (1985), 464–468 |
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