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Uritsky, Valery Yakovlevich

Statistics Math-Net.Ru
Total publications: 3
Scientific articles: 3

Number of views:
This page:75
Abstract pages:132
Full texts:75
Professor
Doctor of physico-mathematical sciences (1995)
Speciality: 01.04.10 (Physcics of semiconductors)
Website: https://etu.ru/ru/fakultety/fakultet-elektroniki/sostav-fakulteta/kafedra-elektronnogo-priborostroeniya/sostav-kafedry
   
Main publications:
  • Mezhfaznye granitsy i kharakteristiki MDP-tranzistorov : Ucheb. posobie / V.Ya. Uritskii; M-vo obrazovaniya RF. S.-Peterb. gos. elektrotekhn. un-t "LETI". - SPb. : LETI, 2002. - 63 s. : il.; 21 sm.; ISBN 5-7629-0429-6
  • Perspektivnye napravleniya mikrotekhnologii : Ucheb. posobie / A. D. Smirnov, V. Ya. Uritskii; M-vo obsch. i prof. obrazovaniya RF. S.-Peterb. gos. elektrotekhn. un-t. - SPb., 1997. - 30 s. : il.; 20 sm.; ISBN 5-7629-0198-X : 50 ekz.

https://www.mathnet.ru/eng/person161469
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Publications in Math-Net.Ru Citations
1986
1. V. V. Monakhov, O. V. Romanov, S. N. Kirillov, V. Ya. Uritsky, V. A. Smirnov, “Stages of Formation of Silicon-Thermal Oxide Interface”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  477–480  mathnet
1985
2. V. Ya. Uritsky, “Energy Spectrum of Surface States in Silicon Gap on the Silicon–Silicon Dioxide Interface”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  744–747  mathnet
1984
3. V. Ya. Uritsky, O. V. Romanov, A. M. Yafyasov, “Characteristics of Si$-$SiO$_2$ Interface and Surface Hole Mobility in the Inversion Layer”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  393–397  mathnet

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