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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
G. G. Savenkov, A. F. Kardo-Sisoev, A. G. Zegrya, I. A. Oskin, V. A. Bragin, G. G. Zegrya, “Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 57–63   ; Tech. Phys. Lett., 43:10 (2017), 896–898 |
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1992 |
| 2. |
A. F. Kardo-Sisoev, M. V. Popova, D. I. Shemetilo, “Влияние накопления неосновных носителей в $p^{+}$-слое на процесс
восстановления напряжения на $p^{+}{-}n$-переходе”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1048–1053 |
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1991 |
| 3. |
I. V. Grekhov, S. V. Zazulin, A. F. Kardo-Sisoev, “Ударная ионизация в кремнии в слабых полях”, Fizika i Tekhnika Poluprovodnikov, 25:5 (1991), 885–892 |
| 4. |
A. F. Kardo-Sisoev, M. V. Popova, “Нестационарные процессы двойной инжекции и рассасывания плазмы
в полупроводниковой $p^{+}{-}n{-}n^{+}$-структуре”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 3–11 |
| 5. |
V. I. Brylevskii, A. F. Kardo-Sisoev, I. A. Smirnova, I. G. Chashnikov, “HIGH-SPEED DINISTORS MANUFACTURED BY THE WAFER DIRECT BONDING TECHNIQUE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:19 (1991), 51–54 |
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1990 |
| 6. |
I. V. Grekhov, S. V. Zazulin, A. F. Kardo-Sisoev, “SHOCK IONIZATION OF DEEP LEVEL OF AU IN SI”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990), 63–67 |
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1988 |
| 7. |
V. I. Brylevskii, I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, I. G. Chashnikov, D. I. Shemetilo, “INVERSE VOLTAGE FAST REDUCTION EFFECT ON THE SYMMETRIC P+PNN+-STRUCTURE”, Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988), 2244–2247 |
| 8. |
V. M. Efanov, A. F. Kardo-Sisoev, M. V. Popova, “Нестационарные токи двойной инжекции в условиях насыщения скоростей
дрейфа электронов и дырок”, Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1747–1753 |
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1987 |
| 9. |
V. M. Efanov, A. F. Kardo-Sisoev, I. A. Smirnova, “Nonstationary Processes of Electron-Hole Plasma Accumulation and Dispersal in Semiconductors in High Electric Fields”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 620–625 |
| 10. |
Zh. I. Alferov, I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, V. I. Korol'kov, M. N. Stepanova, “Formation of high-voltage differential pressure of picosecond range on arsenide-gallium diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987), 1089–1093 |
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1986 |
| 11. |
I. V. Grekhov, A. F. Kardo-Sisoev, I. A. Smirnova, S. V. Shenderei, V. S. Yuferev, “Fast Ionization Waves in a Semiconductor Related with Superradiation”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1335–1337 |
| 12. |
Zh. I. Alferov, V. M. Efanov, Yu. M. Zadiranov, A. F. Kardo-Sisoev, V. I. Korol'kov, S. I. Ponomarev, A. V. Rozhkov, “Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986), 1281–1285 |
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1985 |
| 13. |
I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, I. A. Smirnova, “Semiconductor powerful subnanosecond commutators with more time retentivity under conducting conditions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 901–904 |
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1983 |
| 14. |
I. V. Grekhov, A. F. Kardo-Sisoev, M. V. Popova, S. V. Shenderei, “Начальная стадия развития волн ударной ионизации в перенапряженных
$p{-}n$-переходах”, Fizika i Tekhnika Poluprovodnikov, 17:8 (1983), 1380–1385 |
| 15. |
I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sisoev, S. V. Shenderei, “Формирование высоковольтных наносекундных перепадов напряжения на
полупроводниковых диодах с дрейфовым механизмом восстановления напряжения”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983), 435–439 |
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