Pranyavichyus, Lyudvikas Ionovich.
Modifikatsiya svoistv tverdykh tel ionnymi puchkami / L. Pranyavichyus, Yu. Dudonis. - Vilnyus : Mokslas, 1980. - 242 s.
Protsessy na poverkhnosti tverdykh tel, aktiviruemye ionnymi puchkami / I. Vosilyus, L. Pranyavichyus; Kaunas. politekhn. in-t im. A. Snechkusa. - Vilnyus : Mokslas, 1987. - 210 s.
L. J. Ðãànyavichyus, S. I. Tamulevichyus, Y. P. Budinavichyus, “AG-SI INTERPHASE, FORMED UNDER SIMULTANEOUS DEPOSITION AND IRRADIATION
OF HIGH-ENERGY IONS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:21 (1988), 1995–1998
1987
2.
I. I. Daugela, L. J. Ðãànyavichyus, “Diagnostics of surface electric-conductivity of zinc-oxide films by surface acoustic-waves during ion irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987), 994–997
1986
3.
A. J. Urbyalis, Yu. J. Dudonis, L. J. Ðãànyavichyus, “Effect of Implantation Dose on Recrystallization of Poly-Si Layers by a CO$_2$ Continuous-Wave Laser”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 393–397
1985
4.
L. J. Ðãànyavichyus, S. I. Tamulevichus, A. P. Matukas, “Element component rupture in $Si\,O_2$ during ion-activated chemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:24 (1985), 1512–1515
5.
L. J. Ðãànyavichyus, L. J. Puodjukinas, I. P. Pojela, “Kinetics of integral mechanical-stress induction in implanted silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:21 (1985), 1312–1314
1984
6.
D.-T. A. Urbonas, I. P. Pojela, L. I. Ðãànyavichyus, “ANISOTROPY-FIELD AND NEEL TEMPERATURE OF IMPLANTED FERRITE-GARNET FILMS”, Zhurnal Tekhnicheskoi Fiziki, 54:11 (1984), 2287–2288
7.
L. J. Ðãànyavichyus, S. I. Tamulevichus, J. I. Naktinis, “Variation of Paramagnetic-Center Concentration
in $a$-Si Films Deposited in Vacuum under Ionic Irradiation”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1191–1193
1983
8.
M. P. Volkov, S. I. Tamulevichus, L. J. Ðãànyavichyus, “Nitrogen implantation effect on the critical temperature of superconducting aluminum films”, Fizika Tverdogo Tela, 25:8 (1983), 2492–2494
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