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Publications in Math-Net.Ru |
Citations |
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1989 |
| 1. |
A. G. Abdusattarov, V. V. Emtsev, T. V. Mashovets, “Влияние параметров импульсного электронного облучения
на эффективность образования дефектов в кремнии”, Fizika i Tekhnika Poluprovodnikov, 23:12 (1989), 2221–2223  |
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1988 |
| 2. |
A. G. Abdusattarov, V. V. Emtsev, T. V. Mashovets, “Влияние интенсивности импульсного электронного облучения
на образование дефектов в $p$-кремнии”, Fizika i Tekhnika Poluprovodnikov, 22:3 (1988), 502–504 |
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1987 |
| 3. |
V. V. Emtsev, T. V. Mashovets, A. G. Abdusattarov, “Interaction of Eigen Point Defects with Impurity Phosphorus Atoms in $n$-Type Silicon under Electron (Pulsed) Irradiation”, Fizika i Tekhnika Poluprovodnikov, 21:11 (1987), 2106–2109 |
| 4. |
N. A. Vitovskiy, A. G. Abdusattarov, V. V. Emtsev, T. V. Mashovets, D. S. Poloskin, “Lifetime of Free Vacancies and Eigen Interstitial Atoms in n-Type Germanium under Electron and Gamma Irradiation”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1826–1831 |
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1986 |
| 5. |
A. G. Abdusattarov, V. V. Emtsev, V. N. Lomasov, T. V. Mashovets, “Rate of $A$-Center Formation in Silicon under Electron Pulsed Irradiation”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 164–167 |
| 6. |
A. G. Abdusattarov, V. V. Emtsev, T. V. Mashovets, “Donor group bounding into electrically nonactive complexes during electron P-germanium with the 1-MeV energy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986), 1461–1464 |
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