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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
V. M. Andreev, D. A. Malevskii, P. V. Pokrovskii, V. D. Rumancev, A. V. Chekalin, “On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (-197 $\le T\le$ +85$^\circ$C)”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1374–1379   ; Semiconductors, 50:10 (2016), 1356–1361 |
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1992 |
| 2. |
A. B. Kazantsev, V. R. Larionov, V. D. Rumancev, E. M. Tanklevskaya, V. P. Khvostikov, “Полосковые зарощенные AlGaAs-гетеролазеры, полученные методом
жидкофазной эпитаксии в одностадийном процессе”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1666–1668 |
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1991 |
| 3. |
A. B. Guchmazov, Kh. -A. Rodriges, V. D. Rumancev, “Бесконтактное измерение электрических и фотоэлектрических параметров
гетероструктур с $p{-}n$-переходом в люминесцирующем материале”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 143–150 |
| 4. |
V. M. Andreev, A. B. Kazantsev, V. R. Larionov, V. D. Rumancev, V. P. Khvostikov, “LOW-THRESHOLD (IN=2.0MA, 300-K) HIGH-PERFORMANCE (ETA-EXT=68-PERCENT)
ALGAAS-HETEROLASERS OBTAINED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY
TECHNIQUE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:5 (1991), 1–5 |
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1990 |
| 5. |
V. M. Andreev, V. Y. Aksenov, A. B. Kazantsev, T. A. Prutskikh, V. D. Rumancev, E. M. Tanklevskaya, V. P. Khvostikov, “Низкопороговые квантово-размерные AlGaAs-гетеролазеры для диапазона
длин волн 730$-$850 нм, полученные методом низкотемпературной ЖФЭ”, Fizika i Tekhnika Poluprovodnikov, 24:10 (1990), 1757–1761 |
| 6. |
V. M. Andreev, V. S. Kalinovskii, V. R. Larionov, M. M. Milanova, K. Y. Rasulov, V. D. Rumancev, V. P. Khvostikov, “PHOTOTRANSDUCERS BASED ON ALGAAS-GAAS HETEROSTRUCTURES FOR SCINTILLATION
DETECTORS OF IONIZING-RADIATIONS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990), 56–59 |
| 7. |
V. M. Andreev, V. R. Larionov, A. M. Mintairov, T. A. Prutskikh, V. D. Rumancev, K. E. Smekalin, V. P. Khvostikov, “STUDY OF COMPOSITION DISTRIBUTION IN ALGAAS HETEROSTRUCTURES WITH
QUANTUM-DIMENSIONAL LAYERS BY THE RAMAN-SCATTERING TECHNIQUE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990), 7–12 |
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1989 |
| 8. |
V. M. Andreev, A. A. Vodnev, V. R. Larionov, T. A. Prutskikh, V. D. Rumancev, K. Y. Rasulov, V. P. Khvostikov, “Фотоэлектрические свойства
AlGaAs$-$GaAs-гетероструктур с туннельно-тонким
«широкозонным окном»”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 597–600 |
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1988 |
| 9. |
V. M. Andreev, A. A. Alaev, V. R. Larionov, V. D. Rumancev, S. S. Shamukhamedov, “ORIENTATION EFFECTS UNDER LIQUID-PHASE EPITAXY OF ALGAAS STRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 58:9 (1988), 1789–1792 |
| 10. |
Zh. I. Alferov, V. M. Andreev, V. Y. Aksenov, V. R. Larionov, V. D. Rumancev, V. P. Khvostikov, “Квантово-размерные низкопороговые
AlGaAs-гетеролазеры, полученные методом низкотемпературной жидкофазной
эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1775–1779 |
| 11. |
Zh. I. Alferov, V. M. Andreev, V. Y. Aksenov, T. N. Nalet, N. T. Fyong, V. D. Rumancev, V. P. Khvostikov, “MULTIDIMENSIONAL STRIP AL-GA-AS-HETEROLASERS OF A MILLIAMPERIC RANGE OF
CURRENTS (IN=2.1-MA, T=300-K), OBTAINED BY METHODS OF LOW-TEMPERATURE
LIQUID-PHASE EPITAXY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988), 2057–2060 |
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| 12. |
Zh. I. Alferov, V. M. Andreev, V. Y. Aksenov, V. R. Larionov, I. A. Mokina, V. D. Rumancev, V. P. Khvostikov, “LOW-THRESHOLD (IN=6.2-MA, T=300-K) BAND QUANTUM DIMENSIONAL
ALGAAS-HETEROLASERS CREATED BY THE LOW-TEMPERATURE LPE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988), 1537–1540 |
| 13. |
V. M. Andreev, A. A. Vodnev, V. R. Larionov, K. Y. Rasulov, V. D. Rumancev, V. P. Khvostikov, “HETEROSTRUCTURES WITH TUNNEL THIN (20-50-A) SURFACE ALGAAS-LAYERS
OBTAINED BY THE LPE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:15 (1988), 1429–1433 |
| 14. |
V. M. Andreev, M. B. Kagan, V. S. Kalinovskii, L. A. Rassadin, V. R. Larionov, T. A. Nuller, V. D. Rumancev, K. Y. Rasulov, “INJECTION ANNEALING OF DEFECTS OF ALGAAS-STRUCTURES OF SOLAR ELEMENTS
DURING EXPOSURE TO RADIATION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988), 121–125 |
| 15. |
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, V. R. Larionov, A. V. Nikitin, T. A. Prutskikh, V. D. Rumancev, “VILET PALGAAS-PGAAS-NGAAS-PHOTOELEMENTS WITH SUPERTHIN (30-300 A)
WIDE-ZONE LAYERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:1 (1988), 76–79 |
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1987 |
| 16. |
V. M. Andreev, A. A. Vodnev, A. M. Mintairov, V. D. Rumancev, V. P. Khvostikov, “Photoluminescence of Quantum-Dimensional Layers in AlGaAs-Heterostructures Produced by the Method of Low-Temperature Liquid-Phase Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1212–1216 |
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1986 |
| 17. |
V. M. Andreev, B. V. Egorov, A. M. Koinova, V. M. Lantratov, V. D. Rumancev, N. M. Saradzhishvili, “High-Efficiency Information-Energy AlGaAs-GaAs Photoreceivers for Fiber-Optical Communication Lines”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 435–439 |
| 18. |
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, O. O. Ivent'eva, V. R. Larionov, V. D. Rumancev, “Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 20:2 (1986), 381–383 |
| 19. |
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, S. G. Konnikov, V. R. Larionov, K. Yu. Pogrebickii, V. D. Rumancev, V. P. Khvostikov, “$Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1089–1093 |
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1985 |
| 20. |
V. M. Andreev, V. D. Rumancev, N. M. Saradzhishvili, O. V. Sulima, O. K. Salieva, “TRANSITION LAYER EFFECT ON THE SPECTRAL DISTRIBUTION OF THE ALGAAS
HETEROPHOTOELEMENT PHOTO-RESPONSE”, Zhurnal Tekhnicheskoi Fiziki, 55:6 (1985), 1124–1129 |
| 21. |
V. M. Andreev, A. M. Allakhverdiev, V. D. Rumancev, O. M. Fedorova, S. S. Shamukhamedov, “Low Rate
of Surface Recombination (${S =10^{4}}\,cm/s$) in Epitaxial $n$-Туре
GaAs”, Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1826–1829 |
| 22. |
V. M. Andreev, A. M. Allakhverdiev, O. O. Ivent'eva, V. M. Kashkarov, V. D. Rumancev, V. A. Terekhov, “Photoluminescent Properties and Electron Structure of Anodic-Oxidized $n$-InP Surface”, Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 110–113 |
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1984 |
| 23. |
V. D. Rumancev, N. M. Saradzhishvili, “EFFECTIVENESS OF PHOTOELECTRIC TRANSFORMATION OF SHORT RADIATION
IMPULSES”, Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984), 979–982 |
| 24. |
А. M. Allakhaverdiev, V. M. Andreev, I. V. Grekhov, L. S. Kostina, V. R. Larionov, V. D. Rumancev, Sh. Sh. Shamukhamedov, “Cascade Si$-$AlGaAs Solar Photocells”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 121–125 |
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1983 |
| 25. |
V. M. Andreev, B. V. Egorov, V. M. Lantratov, V. D. Rumancev, S. I. Troshkov, “SOLAR HETEROPHOTOELEMENTS WITH AN INCREASED DEPTH OF P-N TRANSITION
POSITION”, Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983), 1658–1660 |
| 26. |
K. K. Aripov, N. S. Koroleva, V. R. Larionov, T. A. Nuller, V. D. Rumancev, “ELECTROLUMINESCENT INVESTIGATIONS OF SOLAR PALGAAS-PGAAS-NGAAS
HETEROPHOTOELEMENTS WITH DISTRIBUTED PARAMETERS”, Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983), 329–332 |
| 27. |
A. M. Allakhverdiev, Yu. M. Zadiranov, V. D. Rumancev, “Взаимное влияние широкозонного и узкозонного
фотоэлементов при работе каскадных $n$-GaAs${-}p$-AlGaAs${-}n$-AlGaAs-гетерофотопреобразователей”, Fizika i Tekhnika Poluprovodnikov, 17:3 (1983), 446–448 |
| 28. |
K. K. Aripov, V. D. Rumancev, “Закономерности формообразования вольтамперных характеристик
солнечных элементов с распределенными параметрами”, Fizika i Tekhnika Poluprovodnikov, 17:2 (1983), 358–361 |
| 29. |
V. M. Andreev, V. R. Larionov, V. D. Rumancev, O. M. Fedorova, S. S. Shamukhamedov, “Высокоэффективные $p$AlGaAs${-}p$GaAs${-}n$GaAs
солнечные фотоэлементы с КПД
19% (AM 0)
и 24% (AM 1.5)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983), 1251–1254 |
| 30. |
V. M. Andreev, Yu. M. Zadiranov, V. D. Rumancev, N. M. Saradzhishvili, O. V. Sulima, “Фотоэлектролюминесценция
в AlGaAs-гетероструктуpax”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983), 1058–1061 |
| 31. |
V. M. Andreev, B. V. Egorov, M. B. Kagan, V. R. Larionov, V. D. Rumancev, S. S. Shamukhamedov, “Концентраторные фотоэлектрические батареи на основе AlGaAs$-$GaAs
солнечных элементов”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:2 (1983), 102–104 |
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