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Publications in Math-Net.Ru |
Citations |
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1989 |
| 1. |
V. M. Andreev, A. A. Vodnev, V. R. Larionov, T. A. Prutskikh, V. D. Rumancev, K. Y. Rasulov, V. P. Khvostikov, “Фотоэлектрические свойства
AlGaAs$-$GaAs-гетероструктур с туннельно-тонким
«широкозонным окном»”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 597–600  |
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1988 |
| 2. |
V. M. Andreev, A. A. Vodnev, V. R. Larionov, K. Y. Rasulov, V. D. Rumancev, V. P. Khvostikov, “HETEROSTRUCTURES WITH TUNNEL THIN (20-50-A) SURFACE ALGAAS-LAYERS
OBTAINED BY THE LPE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:15 (1988), 1429–1433 |
| 3. |
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, V. R. Larionov, A. V. Nikitin, T. A. Prutskikh, V. D. Rumancev, “VILET PALGAAS-PGAAS-NGAAS-PHOTOELEMENTS WITH SUPERTHIN (30-300 A)
WIDE-ZONE LAYERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:1 (1988), 76–79 |
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1987 |
| 4. |
V. M. Andreev, A. A. Vodnev, A. M. Mintairov, V. D. Rumancev, V. P. Khvostikov, “Photoluminescence of Quantum-Dimensional Layers in AlGaAs-Heterostructures Produced by the Method of Low-Temperature Liquid-Phase Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1212–1216 |
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1986 |
| 5. |
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, O. O. Ivent'eva, V. R. Larionov, V. D. Rumancev, “Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy”, Fizika i Tekhnika Poluprovodnikov, 20:2 (1986), 381–383 |
| 6. |
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, S. G. Konnikov, V. R. Larionov, K. Yu. Pogrebickii, V. D. Rumancev, V. P. Khvostikov, “$Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1089–1093 |
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