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Publications in Math-Net.Ru |
Citations |
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1991 |
1. |
A. V. Demchuk, V. A. Labunov, “MODIFICATION OF MORPHOLOGY OF SILICON AMORPHIZED LAYERS SURFACE UNDER
LOCAL FUSION MODES UNDER THE LASER-EMISSION OF NANOSECOND DURATION”, Zhurnal Tekhnicheskoi Fiziki, 61:9 (1991), 141–146 |
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1990 |
2. |
A. V. Demchuk, V. A. Labunov, “DIFFRACTION STRUCTURES IN RECRYSTALLIZED LAYERS OF POLYCRYSTAL SILICON
UNDER THE LASER-EMISSION OF NANOSECOND DURATION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:12 (1990), 18–22 |
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1989 |
3. |
A. V. Demchuk, V. A. Labunov, “FORMATION OF DENDRITIC STRUCTURES CAUSED BY RECRYSTALLIZATION OF
POLYCRYSTALLINE SILICON LAYERS BY NANOSECOND DURATION LASER-EMISSION”, Zhurnal Tekhnicheskoi Fiziki, 59:11 (1989), 146–148 |
4. |
A. V. Demchuk, N. I. Danilovich, V. A. Labunov, “FORMATION OF A CELLULAR STRUCTURE ON THE SILICON LAYER SURFACE UNDER THE
PULSE LASER-EMISSION OF NANOSECOND LENGTH”, Zhurnal Tekhnicheskoi Fiziki, 59:9 (1989), 166–169 |
5. |
A. V. Demchuk, V. A. Labunov, “FORMATION OF SURFACE PERIODIC STRUCTURES UNDER RECRYSTALLIZATION OF
SILICONE CAPSULAR ISLANDS BY THE NANOSECOND LENGTH LASER-EMISSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989), 25–28 |
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1986 |
6. |
A. M. Pristrem, A. V. Demchuk, N. I. Danilovich, “LOCAL GENERATION OF THE MELTED PHASE DURING IMPULSE LASER SILICON
ANNEALING”, Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986), 1220–1224 |
7. |
A. V. Demchuk, A. M. Pristrem, N. I. Danilovich, V. A. Labunov, “SILICON SURFACE PERIODIC STRUCTURES INDUCED BY LASER-EMISSION OF
MILLISECOND DURATION”, Zhurnal Tekhnicheskoi Fiziki, 56:4 (1986), 810–813 |
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1985 |
8. |
A. M. Pristrem, A. V. Demchuk, N. I. Danilovich, “Mechanism of athermal crystallization during pulsive silicon annealing”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:3 (1985), 177–181 |
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Organisations |
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