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Publications in Math-Net.Ru |
Citations |
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1988 |
| 1. |
S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “Исследование субнаносекундного включения арсенид-галлиевых
тиристорных структур”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1134–1137  |
| 2. |
S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “VISUALIZATION OF THE SUBNANOSECOND SWITCHING OF ARSENIDE-GALLIUM-DIODE
STRUCTURES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:16 (1988), 1526–1530 |
| 3. |
A. S. Ardzhanov, S. N. Vainshtein, Yu. V. Zhilyaev, M. V. Zaks, N. I. Kuznetsov, A. B. Slutskii, V. Y. Stoyanovskii, V. E. Chelnokov, “HIGH-VOLTAGE ARSENIDE-GALLIUM FORCE DIODES OF LARGE SQUARE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988), 1153–1156 |
| 4. |
M. M. Anikin, S. N. Vainshtein, M. E. Levinshteĭn, A. M. Strelchuk, A. L. Sirkin, “NEGATIVE TEMPERATURE-COEFFICIENT OF BREAKDOWN PRESSURE IN
SILICON-CARBIDE R-P TRANSITIONS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:6 (1988), 545–547 |
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1987 |
| 5. |
S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “Propagation of Switched State in Gallium-Arsenide Thyristors”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 129–133 |
| 6. |
S. N. Vainshtein, V. A. Dmitriev, A. L. Syrkin, V. E. Chelnokov, “Dinistor on silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987), 991–993 |
| 7. |
S. N. Vainshtein, V. A. Dmitriev, M. E. Levinshteĭn, S. V. Rendakova, “Current stringing in silicon-carbide R-P-transitions under the breakdown”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987), 741–743 |
| 8. |
S. N. Vainshtein, M. E. Levinshteĭn, S. L. Rumayncev, “Light quenching of the $1/f$ noise in gallium-arsenide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 645–648 |
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1986 |
| 9. |
S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “COMPARATIVE INVESTIGATION OF THE SWITCHING ON PROCESSES OF
GALLIUM-ARSENIDE AND SILICON THYRISTORS”, Zhurnal Tekhnicheskoi Fiziki, 56:7 (1986), 1343–1347 |
| 10. |
O. A. Belyaeva, S. N. Vainshtein, Yu. V. Zhilyaev, Yu. V. Levinshtein, V. E. Chelnokov, “Subnanosecond connection of arsenide-gallium thyristors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:15 (1986), 925–928 |
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1984 |
| 11. |
A. G. Astafurov, S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, V. E. Chelnokov, “SWITCHED ON STATE PROPAGATION IN GAAS THYRISTORS OF THE LARGE AREA”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984), 1430–1433 |
| 12. |
V. M. Botnaryk, S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “HIGH-POWER, HIGH-SPEED COMMUTATORS BASED ON GAAS DINISTOR STRUCTURES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984), 385–388 |
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1983 |
| 13. |
S. N. Vainshtein, I. I. Diakonu, Yu. V. Zhilyaev, M. E. Levinshteĭn, “MAIN PARAMETERS OF SWITCHING-ON OF ARSENIDE-GALLIUM THYRISTORS”, Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983), 573–575 |
| 14. |
S. N. Vainshtein, I. I. Diakonu, Yu. V. Zhilyaev, M. E. Levinshteĭn, “Распространение включенного состояния в арсенидгаллиевых тиристорах”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:9 (1983), 546–549 |
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