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Publications in Math-Net.Ru |
Citations |
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2020 |
1. |
A. A. Lebedev, A. V. Kirillov, L. P. Romanov, A. V. Zubov, A. M. Strel'chuk, “Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$–$i$–$n$ diodes”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 264–267 ; Tech. Phys., 65:2 (2020), 250–253 |
2. |
E. V. Kalinina, A. A. Katashev, G. N. Violina, A. M. Strel'chuk, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, “Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1368–1373 ; Semiconductors, 54:12 (2020), 1628–1633 |
3. |
A. M. Strel'chuk, A. A. Lebedev, P. V. Bulat, “Characteristics of Schottky rectifier diodes based on silicon carbide at elevated temperatures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1364–1367 ; Semiconductors, 54:12 (2020), 1624–1627 |
4. |
V. V. Kozlovsky, O. Korolkov, K. S. Davydovskaja, A. A. Lebedev, M. E. Levinshteĭn, N. Sleptsuk, A. M. Strel'chuk, J. Toompuu, “Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 35–37 ; Tech. Phys. Lett., 46:3 (2020), 287–289 |
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2019 |
5. |
A. A. Lebedev, M. E. Levinshteĭn, P. A. Ivanov, V. V. Kozlovsky, A. M. Strel'chuk, E. I. Shabunina, L. Fursin, “Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1604–1608 ; Semiconductors, 53:12 (2019), 1568–1572 |
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2018 |
6. |
A. M. Strel'chuk, V. V. Kozlovsky, A. A. Lebedev, “Radiation-induced damage of silicon-carbide diodes by high-energy particles”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1651–1655 ; Semiconductors, 52:13 (2018), 1758–1762 |
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2017 |
7. |
V. V. Kozlovsky, A. A. Lebedev, A. M. Strel'chuk, K. S. Davydovskaja, A. È. Vasil'ev, L. F. Makarenko, “Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 311–316 ; Semiconductors, 51:3 (2017), 299–304 |
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8. |
A. A. Lebedev, K. S. Davydovskaja, A. N. Yakimenko, A. M. Strel'chuk, V. V. Kozlovsky, “A study of the effect of electron and proton irradiation on 4$H$-SiC device structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 63–67 ; Tech. Phys. Lett., 43:11 (2017), 1027–1029 |
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2016 |
9. |
A. E. Kalyadin, N. A. Sobolev, A. M. Strel'chuk, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, “Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 250–253 ; Semiconductors, 50:2 (2016), 249–251 |
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1991 |
10. |
M. M. Anikin, A. N. Andreev, A. A. Lebedev, S. N. Pyatko, M. G. Rastegaeva, N. S. Savkina, A. M. Strel'chuk, A. L. Syrkin, V. E. Chelnokov, “Высокотемпературный диод Шоттки Au$-$SiC-$6H$”, Fizika i Tekhnika Poluprovodnikov, 25:2 (1991), 328–333 |
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1990 |
11. |
M. M. Anikin, N. I. Kuznetsov, A. A. Lebedev, A. M. Strel'chuk, A. L. Syrkin, “Связь желтой электролюминесценции в $6H$-SiC с глубокими центрами”, Fizika i Tekhnika Poluprovodnikov, 24:8 (1990), 1384–1390 |
12. |
B. S. Kondrat'ev, I. V. Popov, A. M. Strel'chuk, M. L. Tiranov, “Электрические характеристики и температурный коэффициент напряжения
пробоя микроплазм в низковольтных карбид-кремниевых $p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 647–652 |
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1989 |
13. |
M. M. Anikin, V. V. Evstropov, I. V. Popov, A. M. Strel'chuk, A. L. Syrkin, “Разновидность неклассического термоинжекционного тока
в карбид-кремниевых $p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1813–1818 |
14. |
M. M. Anikin, V. V. Evstropov, I. V. Popov, V. N. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, “Неклассический термоинжекционный ток в карбид-кремниевых
$p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 647–651 |
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1988 |
15. |
M. M. Anikin, M. E. Levinshteĭn, I. V. Popov, V. P. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, “Температурная зависимость напряжения лавинного пробоя
в карбид-кремниевых $p{-}n$-переходах”, Fizika i Tekhnika Poluprovodnikov, 22:9 (1988), 1574–1579 |
16. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, V. P. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, Yu. M. Tairov, V. F. Cvetkov, V. E. Chelnokov, “Электрические характеристики эпитаксиальных
$p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 298–300 |
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1987 |
17. |
V. A. Dmitriev, P. A. Ivanov, V. I. Levin, I. V. Popov, A. M. Strel'chuk, Yu. M. Tairov, V. F. Cvetkov, V. E. Chelnokov, “Formation of $Si\,C$ epitaxial R-P-structures of sublayers, obtained from volume $Si\,C$ crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987), 1168–1171 |
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1986 |
18. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel'chuk, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1654–1657 |
19. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel'chuk, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 844–848 |
20. |
V. A. Dmitriev, P. A. Ivanov, I. V. Popov, A. V. Strel'chuk, A. L. Syrkin, V. E. Chelnokov, “Tension limitations obtained by carbide-silicon R-P-structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986), 773–776 |
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1985 |
21. |
V. A. Dmitriev, P. A. Ivanov, A. M. Strel'chuk, A. L. Sirkin, I. V. Popov, V. E. Chelnokov, “Tunnel-diode based on $Si\,C$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985), 976–978 |
22. |
V. A. Dmitriev, P. A. Ivanov, I. V. Korkin, Ya. V. Morozenko, I. V. Popov, T. A. Sidorova, A. M. Strel'chuk, V. E. Chelnokov, “Silicon-carbide R-P-structures produced by liquid epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 238–241 |
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