|
|
|
Publications in Math-Net.Ru |
Citations |
|
1992 |
| 1. |
B. Ya. Ber, V. P. Evtikhiev, A. B. Komissarov, A. O. Kosogov, D. A. Zushinskii, “MOLECULAR-BEAM EPITAXY (MBE) OF GAAS AND (AL,GA)AS ON UNORIENTED
GAAS(100) SUBSTRATES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:11 (1992), 72–76  |
|
1988 |
| 2. |
Zh. I. Alferov, D. Z. Garbuzov, A. G. Denisov, V. P. Evtikhiev, A. B. Komissarov, A. P. Senichkin, V. N. Skorokhodov, V. E. Tokranov, “Квантово-размерные AlGaAs/GaAs-гетероструктуры со
100%-м квантовым
выходом излучательной рекомбинации, полученные методом молекулярно-пучковой
эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2105–2110 |
| 3. |
N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. I. Kolyshkin, A. B. Komissarov, A. V. Kochergin, T. A. Nalet, N. A. Strugov, “POWER CONTINUOUS INGAASP/GAAS HETEROLASER WITH THE DIELECTRIC MIRROR
(IPOR=100A/CM2,D=1.1WATT,EFFICIENCY=66-PERCENT,T=10-DEGREES-C”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 699–702 |
|
1987 |
| 4. |
I. N. Arsent'ev, N. Yu. Antonishkis, D. Z. Garbuzov, V. V. Krasovskii, A. B. Komissarov, V. B. Khalfin, “Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 178–181 |
|
1986 |
| 5. |
D. Z. Garbuzov, S. V. Zaitsev, A. B. Nivin, A. V. Ovchinnikov, I. S. Tarasov, A. B. Komissarov, M. K. Trukan, “Continuous intrastrip $In\,Ga\,As\,P/In\,P$ SL DH-lasers with $\lambda=1.3$-mu-m – reduction of thresholds and the capacity increase”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986), 660–663 |
| |
|
|
Contact us: