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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
G. I. Koltsov, V. V. Makarov, “Некоторые эффекты, влияющие на профиль распределения внедренных ионов
в кристаллических мишенях полупроводниковых соединений
A$^{\text{III}}$B$^{\text{V}}$ после ионной имплантации”, Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 373–378  |
| 2. |
V. V. Makarov, S. I. Igonin, “APPLICATION OF HIGH-RESOLUTION SPECTROSCOPY OF ELASTIC REFLECTION FOR
STUDYING THE DIFFRACTION EFFECTS DURING INTERACTION OF FAST ELECTRONS
WITH MONOCRYSTALS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 10–12 |
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1989 |
| 3. |
V. V. Makarov, V. P. Artemev, N. N. Petrov, “ELECTRONIC ANALOGS OF THE TECHNIQUE OF BACK SCATTERING OF FAST IONS FOR
INVESTIGATION OF DEFECT DEPTH PROFILES IN MONOCRYSTALS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989), 30–33 |
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1987 |
| 4. |
S. I. Igonin, V. V. Makarov, “Determination of chemical-composition of compounds on power spectra of fast electron elastic reflection”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987), 1043–1047 |
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1986 |
| 5. |
V. A. Gudkov, G. A. Krysov, V. V. Makarov, “Effect of Surface Dissociation on the Properties of Ionically Implanted Silicon-Carbide $p$-Type Layers”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 170–172 |
| 6. |
V. V. Makarov, O. A. Podsvirov, “Influence of non-centrisymmetric crystal-lattice on electron channeling”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:8 (1986), 501–505 |
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1984 |
| 7. |
V. A. Gudkov, G. A. Krysov, V. V. Makarov, “Study of the Effect of Silicon-Carbide Ion Implantation and
Annealing Modes on Crystal Structure and Resistance of $p$-Type
Layers”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1098–1100 |
| 8. |
E. E. Kvasov, V. V. Makarov, “Thermoelastic Stress in Silicon Annealed by Millisecond Pulses”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 747–750 |
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