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Publications in Math-Net.Ru |
Citations |
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1990 |
| 1. |
B. I. Sysoev, V. D. Strygin, G. I. Kotov, “SCHOTTKY BARRIERS ON GALLIUM-ARSENIDE PRETREATED IN SELENIUM VAPORS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990), 22–26  |
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1987 |
| 2. |
B. I. Sysoev, V. F. Antyushin, E. V. Rudnev, V. D. Strygin, “Evaluation of Electron Surface Mobility in the Heterostructure of Gallium Arsenide–Semiconductor with Stoichiometric Vacancies”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1310–1312 |
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1986 |
| 3. |
B. I. Sysoev, V. F. Antyushin, V. D. Strygin, V. N. Morgunov, “GALLIUM-ARSENIDE INSULATION COVERING”, Zhurnal Tekhnicheskoi Fiziki, 56:5 (1986), 913–915 |
| 4. |
B. I. Sysoev, V. F. Antyushin, V. D. Strygin, “On the Determination of Surface Mobility in MDS Structures with Charge Transfer”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 48–52 |
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1984 |
| 5. |
V. I. Sysoev, V. F. Antyushin, V. D. Strygin, “Модуляция областей пространственного заряда в изотипных полевых
структурах с подзатворным слоем широкозонного полупроводника”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1739–1743 |
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