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Publications in Math-Net.Ru |
Citations |
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1990 |
1. |
Yu. F. Birulin, V. N. Karyaev, A. M. Kreschuk, V. A. Pisarevskaya, “Особенности электрофизических свойств GaAsSb, легированного
амфотерной примесь — германием”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2219–2222 |
2. |
Yu. F. Birulin, V. V. Vorob'eva, S. V. Novikov, D. N. Shelkovnikov, “Двойное легирование эпитаксиального GaAs изовалентной примесью —
висмутом и акцепторной примесью — цинком”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2217–2219 |
3. |
A. A. Aristarkhova, Yu. F. Birulin, S. S. Volkov, S. V. Novikov, M. Y. Timashev, “COMPOSITION AND STOCHIOMETRY OF GAAS SURFACE OBTAINED DURING
LIQUID-PHASE EPITAXY UNDER ISOVALENT ALLOYING”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990), 59–61 |
4. |
A. A. Aristarkhova, Yu. F. Birulin, S. S. Volkov, V. N. Karyaev, M. Y. Timashev, “SURFACE OF GALLIUM-ARSENIDE ALLOYED BY ANTIMONY ISOVALENT ADMIXTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990), 43–47 |
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1989 |
5. |
Yu. F. Birulin, T. A. Lagvilava, M. G. Mil'vidskii, V. A. Pisarevskaya, E. V. Soloveva, V. V. Chaldyshev, Yu. V. Shmartsev, “Об одной особенности донора — серы в GaP”, Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 1070–1075 |
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1988 |
6. |
V. M. Amusya, Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Зависимость ширины запрещенной зоны от состава в твердом растворе
InP$_{1-x}$Sb$_{x}$ (${x\leqslant 0.07}$)”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 342–344 |
7. |
A. A. Aristarkhova, Yu. F. Birulin, S. S. Volkov, S. V. Novikov, M. Y. Timashev, Yu. V. Shmartsev, “FEATURES OF THE SURFACE OF GALLIUM-ARSENIDE, GROWN FROM BISMUTH
SOLUTION-FUSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988), 1794–1799 |
8. |
Yu. F. Birulin, V. P. Germogenov, O. M. Ivleva, S. G. Konnikov, Y. I. Otman, V. V. Tretyakov, V. V. Chaldyshev, Yu. V. Shmartsev, V. A. Shulbakh, L. E. Epiktetova, “SOLID-SOLUTIONS IN THE GA-SB-BI SYSTEMS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1651–1655 |
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1987 |
9. |
Yu. F. Birulin, V. V. Vorob'eva, V. G. Golubev, L. V. Golubev, V. I. Ivanov-Omskii, S. V. Novikov, A. V. Osutin, I. G. Savelev, V. V. Chaldyshev, Yu. V. Shmartsev, O. V. Yaroshevich, “Mechanism of «Purification» of Gallium Arsenide by Bismuth”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2201–2209 |
10. |
Yu. F. Birulin, V. P. Germogenov, Y. I. Otman, V. V. Chaldyshev, Yu. V. Shmartsev, L. E. Epiktetova, “Effect of Isovalent Indium-Doping on «Natural» Acceptors in Gallium Antimonide”, Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 1118–1124 |
11. |
Yu. F. Birulin, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Effect of Isovalent Bismuth Doping on Shallow-Acceptor Concentration in Gallium Arsenide”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 949–952 |
12. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Photoluminescence of germanium-alloyed and bismuth-alloyed $Ga\,As$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1264–1267 |
13. |
Yu. F. Birulin, V. G. Nikitin, D. L. Nugmanov, V. V. Chaldyshev, “Compensation of radical admixtures in epitaxial layers of $Ga\,As:Bi$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1255–1259 |
14. |
Yu. F. Birulin, G. S. Vil'dgrube, V. N. Karyaev, A. I. Klimin, T. N. Palts, V. V. Chaldyshev, Yu. V. Shmartsev, “Nea photocathodes based on $Ga\,As_{1-x}\,Sb_{x}$ solid-solutions – their application in photomultipliers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:14 (1987), 833–835 |
15. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, T. V. Cherneva, Yu. V. Shmartsev, “Solid-solution in the indium phosphide–indium antimonide system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 188–191 |
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1986 |
16. |
R. Kh. Akchurin, Yu. F. Birulin, S. A. Islamov, V. V. Chaldyshev, Yu. V. Shmartsev, “Photoluminescence of Bismuth-Doped InP”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1258–1261 |
17. |
Yu. F. Birulin, A. Ya. Vul', V. N. Karyaev, S. V. Kidalov, Yu. V. Shmartsev, “R-P structures based on $Al\,As-Ga$, $As-Ga\,Sb$ solid-solutions with the spectro-sensitive controlled strip”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:12 (1986), 764–767 |
18. |
Yu. F. Birulin, N. V. Ganinia, V. V. Chaldyshev, Yu. V. Shmartsev, “The purification of gallium-arsenide by bismuth”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986), 274–276 |
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1985 |
19. |
Yu. F. Birulin, N. V. Ganinia, V. V. Chaldyshev, Yu. V. Shmartsev, “To the Problem of Variation of Shallow-Impurity Compensation Degree under Isovalent Doping of Gallium
Arsenide”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1104–1107 |
20. |
L. I. Antonova, Yu. F. Birulin, A. Ya. Vul', V. P. Denisov, L. G. Zabelina, R. R. Ichkitidze, A. I. Klimin, S. E. Kozlov, Yu. V. Shmartsev, “Gallium-arsenide photocathode with the integral sensitivity of $3200$ mkA-lm”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:10 (1985), 602–605 |
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1984 |
21. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, Yu. V. Shmartsev, “STRUCTURE CONTROL IN THE ELECTROLIQUID EPITAXY METHOD”, Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984), 1394–1399 |
22. |
Yu. F. Birulin, R. R. Ichkitidze, V. V. Chaldyshev, Yu. V. Shmartsev, “On the Dependence of Photoluminescence
Quantum Yield in GaAs$_{1-x}$Sb$_{x}$ Solid Solution on Temperature
and Composition”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1251–1255 |
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1983 |
23. |
Yu. F. Birulin, N. V. Ganinia, M. G. Mil'vidskii, V. V. Chaldyshev, Yu. V. Shmartsev, “Фотолюминесценция твердых растворов
GaAs$_{1-x}$Sb$_{x}$ И Ga$_{1-x}$In$_{x}$As (${x< 0.01}$)”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 108–114 |
24. |
Yu. F. Birulin, S. P. Vul', V. V. Chaldyshev, Yu. V. Shmartsev, “О зависимости ширины запрещенной зоны нелегированного твердого
раствора Al$_{x}$Ga$_{1-x}$Sb от состава (${0\leqslant x\leqslant1}$)
и температуры (${4.2\leqslant T\leqslant200}$ K)”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 103–107 |
25. |
Yu. F. Birulin, N. V. Ganinia, V. V. Chaldyshev, Yu. V. Shmartsev, “О корреляции в расположении мелких примесей в арсениде галлия,
легированном индием и сурьмой”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:4 (1983), 242–245 |
26. |
Yu. F. Birulin, L. V. Golubev, S. V. Novikov, Yu. V. Shmartsev, “Электрожидкостная эпитаксия в системе (GaAs$_{1-x}$Sb$_{x}$)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:3 (1983), 155–158 |
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