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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
K. V. Vasilevskiy, V. A. Dmitriev, V. V. Novozhilov, A. L. Sirkin, V. E. Chelnokov, A. E. Cherenkov, “REVERSED MESA-STRUCTURE FROM SILICON-CARBIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992), 28–31  |
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1991 |
| 2. |
M. M. Anikin, A. N. Andreev, A. A. Lebedev, S. N. Pyatko, M. G. Rastegaeva, N. S. Savkina, A. M. Strel'chuk, A. L. Syrkin, V. E. Chelnokov, “Высокотемпературный диод Шоттки Au$-$SiC-$6H$”, Fizika i Tekhnika Poluprovodnikov, 25:2 (1991), 328–333 |
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1990 |
| 3. |
M. M. Anikin, N. I. Kuznetsov, A. A. Lebedev, A. M. Strel'chuk, A. L. Syrkin, “Связь желтой электролюминесценции в $6H$-SiC с глубокими центрами”, Fizika i Tekhnika Poluprovodnikov, 24:8 (1990), 1384–1390 |
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1989 |
| 4. |
M. M. Anikin, V. V. Evstropov, I. V. Popov, A. M. Strel'chuk, A. L. Syrkin, “Разновидность неклассического термоинжекционного тока
в карбид-кремниевых $p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1813–1818 |
| 5. |
M. M. Anikin, V. V. Evstropov, I. V. Popov, V. N. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, “Неклассический термоинжекционный ток в карбид-кремниевых
$p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 647–651 |
| 6. |
M. M. Anikin, P. A. Ivanov, A. L. Sirkin, B. V. Tsarenkov, V. E. Chelnokov, “SIC-6H FIELD TRANSISTOR WITH RECORD TRANSCONDUCTANCE FOR CARBIDE-SILICON
TRANSISTORS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:16 (1989), 36–42 |
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1988 |
| 7. |
M. M. Anikin, M. E. Levinshteĭn, I. V. Popov, V. P. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, “Температурная зависимость напряжения лавинного пробоя
в карбид-кремниевых $p{-}n$-переходах”, Fizika i Tekhnika Poluprovodnikov, 22:9 (1988), 1574–1579 |
| 8. |
B. I. Vishnevskaya, V. A. Dmitriev, I. D. Kovalenko, L. M. Kogan, Ya. V. Morozenko, V. S. Rodkin, A. L. Syrkin, B. V. Tsarenkov, V. E. Chelnokov, “Синие SiC-$6H$-светодиоды”, Fizika i Tekhnika Poluprovodnikov, 22:4 (1988), 664–669 |
| 9. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, V. P. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, Yu. M. Tairov, V. F. Cvetkov, V. E. Chelnokov, “Электрические характеристики эпитаксиальных
$p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 298–300 |
| 10. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, S. N. Pyatko, V. P. Rastegaev, A. L. Syrkin, B. V. Tsarenkov, V. E. Chelnokov, “Электростатические свойства SiC-$6H$-структур с резким
$p{-}n$-переходом”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 133–136 |
| 11. |
M. M. Anikin, S. N. Vainshtein, M. E. Levinshteĭn, A. M. Strelchuk, A. L. Sirkin, “NEGATIVE TEMPERATURE-COEFFICIENT OF BREAKDOWN PRESSURE IN
SILICON-CARBIDE R-P TRANSITIONS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:6 (1988), 545–547 |
| 12. |
V. A. Dmitriev, P. A. Ivanov, N. D. Il'inskaya, A. L. Sirkin, B. V. Tsarenkov, V. E. Chelnokov, A. E. Cherenkov, “HIGH-TEMPERATURE SIC-6H FIELD TRANSISTOR WITH THE P-N LOCKS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988), 289–293 |
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1987 |
| 13. |
S. N. Vainshtein, V. A. Dmitriev, A. L. Syrkin, V. E. Chelnokov, “Dinistor on silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987), 991–993 |
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1986 |
| 14. |
M. M. Anikin, A. A. Lebedev, A. A. Lebedev, A. L. Syrkin, A. V. Suvorov, “Capacity Spectroscopy of p${-}$n Junctions Based on Epitaxial $4H$-SiC Produced by Ionic Implantation of Al”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2169–2172 |
| 15. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel'chuk, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1654–1657 |
| 16. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel'chuk, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 844–848 |
| 17. |
V. A. Dmitriev, P. A. Ivanov, I. V. Popov, A. V. Strel'chuk, A. L. Syrkin, V. E. Chelnokov, “Tension limitations obtained by carbide-silicon R-P-structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986), 773–776 |
| 18. |
V. A. Dmitriev, Ya. V. Morozenko, I. V. Popov, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “3-color blue-green-red-indicator formed on monocrystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 541–543 |
| 19. |
I. V. Popov, A. L. Sirkin, V. E. Chelnokov, “Reactive ion-plasma beam etching of silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986), 240–243 |
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1985 |
| 20. |
M. M. Anikin, A. A. Lebedev, A. L. Syrkin, A. V. Suvorov, “Capacity-Spectroscopic Study of Deep Levels in SiC”, Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 114–117 |
| 21. |
V. A. Dmitriev, P. A. Ivanov, A. M. Strel'chuk, A. L. Sirkin, I. V. Popov, V. E. Chelnokov, “Tunnel-diode based on $Si\,C$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985), 976–978 |
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1984 |
| 22. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, V. E. Sevastyanov, A. L. Sirkin, A. L. Suvorov, V. E. Chelnokov, G. P. Spynev, “RECTIFIER DIODE BASED ON SILICON-CARBIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984), 1053–1056 |
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