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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
V. G. Antipov, R. V. Kallion, R. N. Kyutt, S. A. Nikishin, S. S. Ruvimov, D. V. Sinyavskii, V. A. Solovev, L. M. Sorokin, N. N. Faleev, M. P. Shcheglov, “Молекулярно-пучковая эпитаксия однодоменного арсенида галлия на (001)
кремнии, пассивированном водородом”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:2 (1992), 1–5  |
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1991 |
| 2. |
V. G. Antipov, S. A. Nikishin, V. N. Svetlov, D. V. Sinyavskii, V. A. Spirenkov, “DETERMINATION OF SUBSTRATE SURFACE-TEMPERATURE INSITU UNDER MBE OF
GAAS(001) USING REFLECTED FAST ELECTRON-DIFFRACTION”, Zhurnal Tekhnicheskoi Fiziki, 61:1 (1991), 174–178 |
| 3. |
V. G. Antipov, S. A. Nikishin, D. V. Sinyavskii, “MOLECULAR-BEAM EPITATY (MBE) OF GAAS ON SI (001) SURFACE, SATURATED WITH
HYDROGEN”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991), 19–23 |
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1990 |
| 4. |
K. Yu. Kizhaev, V. I. Kuchinskii, S. A. Nikishin, K. Yu. Pogrebickii, V. B. Smirnitskiĭ, N. N. Faleev, “CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE
HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM”, Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990), 123–128 |
| 5. |
V. G. Antipov, R. V. Kallion, S. A. Nikishin, D. V. Sinyavskii, “STABILITY OF PROPERTIES (COMPOSITION, STRUCTURE) OF HYDROGEN-PASSIVATED
SI(001) SURFACE DURING PREEPITAXIAL THERMAL-TREATMENT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990), 66–69 |
| 6. |
V. G. Antipov, S. A. Nikishin, V. N. Svetlov, D. V. Sinyavskii, O. V. Smol'skii, V. A. Spirenkov, “EVOLUTION OF THE (OO)-REFLEX OF THE RFED PICTURE AT THE INITIAL-STAGES
OF GAAS(001) MBE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990), 41–46 |
| 7. |
A. I. Guriev, A. G. Deryagin, K. Yu. Kizhaev, D. V. Kuksenkov, V. I. Kuchinskii, S. A. Nikishin, E. L. Portnoĭ, V. B. Smirnitskiĭ, “CHARACTERISTICS OF OBLITERATION OF WAVE-GUIDE PROFILE SURFACE IN
INGAASP/INP ROS LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990), 5–9 |
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1988 |
| 8. |
S. Yu. Karpov, O. S. Mazhorova, S. A. Nikishin, Y. P. Popov, V. I. Pokhilko, D. V. Sinyavskii, “DIFFUSION-MODEL OF THE EPITAXIAL-GROWTH OF ALXGA1-XAS SOLID-SOLUTIONS
FROM LIMITED FUSION”, Zhurnal Tekhnicheskoi Fiziki, 58:2 (1988), 355–362 |
| 9. |
A. I. Guriev, S. A. Nikishin, D. V. Kuksenkov, V. I. Kuchinskii, E. L. Portnoĭ, V. B. Smirnitskiĭ, “DFB-GENERATION IN INGAASP/INP-LASERS WHERE (LAMDA=1.5-1.6 MU-M) WITH A
COMPOUND ACTIVE LAYER”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:12 (1988), 1082–1088 |
| 10. |
K. Yu. Kizhaev, D. V. Kuksenkov, V. I. Kuchinskii, S. A. Nikishin, E. L. Portnoĭ, V. B. Smirnitskiĭ, “CHARACTERISTICS OF THE GENERATION IN INGAASP/INP HIGHLY DETUNED
ROS-LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988), 267–273 |
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1987 |
| 11. |
N. D. Il'inskaya, S. A. Nikishin, M. A. Sinicin, D. V. Sinyavskii, L. P. Sorokina, B. S. Yavich, “CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT
DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES”, Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 778–782 |
| 12. |
V. I. Gladuschak, S. Yu. Karpov, V. I. Kuchinskii, V. M. Lantratov, S. A. Nikishin, D. V. Sinyavskii, V. B. Smirnitskiĭ, O. V. Smol'skii, “Low-threshold injection heterolasers with electric limits developed by the pulse laser effect”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987), 913–918 |
| 13. |
Zh. I. Alferov, K. Yu. Kizhaev, D. V. Kuksenkov, V. I. Kuchinskii, S. A. Nikishin, E. L. Portnoĭ, V. B. Smirnitskiĭ, “Heterolasers with distributed feedback ($\lambda=1.55$ mu-m), operating in continuous regime at room-temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 513–517 |
| 14. |
K. Yu. Kizhaev, D. V. Kuksenkov, V. I. Kuchinskii, A. S. Lazutka, S. A. Nikishin, E. L. Portnoĭ, V. B. Smirnitskiĭ, “Time characteristics of $In\,Ga\,As\,P/In\,P$ emission of injection-lasers with quantum-dimensional active layers, obtained by the liquid epitaxy method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 141–146 |
| 15. |
K. Yu. Kizhaev, S. G. Konnikov, S. A. Nikishin, K. Yu. Pogrebickii, V. P. Ulin, N. N. Faleev, L. I. Flaks, “Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 132–136 |
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1986 |
| 16. |
V. A. An, S. A. Nikishin, E. L. Portnoĭ, D. V. Sinyavskii, “INFLUENCE OF GROWING CONDITIONS ON PARAMETERS OF MULTIWAVE DHS-LASERS”, Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986), 1142–1149 |
| 17. |
S. Yu. Karpov, M. G. Mil'vidskii, S. A. Nikishin, E. L. Portnoĭ, “LIQUID EPITAXY, CONTROLLED BY TEMPERATURE AND CURRENT CHANGES (LECTCC)”, Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986), 353–360 |
| 18. |
K. Yu. Kizhaev, V. I. Kuchinskii, A. S. Lazutka, S. A. Nikishin, E. L. Portnoĭ, V. B. Smirnitskiĭ, “Experimental Observation of Size-Quantization Effects in Heterolaser Structures with Random Variations of Quantum-Size Active-Layer Thickness”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1222–1226 |
| 19. |
Zh. I. Alferov, S. A. Gurevich, R. V. Markova, V. M. Marahonov, S. A. Nikishin, E. L. Portnoĭ, M. A. Sinicin, D. V. Sinyavskii, F. N. Timofeev, A. E. Fedorovich, B. S. Yavich, “Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986), 577–582 |
| 20. |
Zh. I. Alferov, B. Ya. Ber, D. Z. Garbuzov, K. Yu. Kizhaev, V. V. Krasovskii, S. A. Nikishin, D. V. Sinyavskii, V. P. Ulin, “Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986), 335–341 |
| 21. |
Zh. I. Alferov, D. Z. Garbuzov, K. Yu. Kizhaev, A. B. Nivin, S. A. Nikishin, A. V. Ovchinnikov, Z. N. Sokolova, I. S. Tarasov, A. V. Chudinov, “Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m
($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986), 210–215 |
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| 22. |
K. Yu. Kizhaev, V. I. Kuchinskii, A. S. Lazutka, S. A. Nikishin, E. L. Portnoĭ, V. B. Smirnitskiĭ, “Influence of random changes in the quantum-dimensional active layer thickness on heterolaser emitting characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986), 205–210 |
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1985 |
| 23. |
S. Yu. Karpov, S. A. Nikishin, E. L. Portnoĭ, D. V. Sinyavskii, “MULTIWAVE LASER EMITTERS BASED ON ALXGA(1-X)AS SOLID-SOLUTIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 1962–1966 |
| 24. |
Zh. I. Alferov, D. Z. Garbuzov, V. V. Krasovskii, S. A. Nikishin, D. V. Sinyavskii, A. V. Tikunov, “Separate-confinement $Al\,Ga\,As/Ga\,As$ heterolasers obtained by the modified method of liquid epitaxy
($I_{\text{p}}=260$ A/cm$^{2}$, $\lambda= 0.86-0.83\,\mu m$, $T= 300$ K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985), 1409–1413 |
| 25. |
Zh. I. Alferov, B. Ya. Ber, K. Yu. Kizhaev, S. A. Nikishin, E. L. Portnoĭ, “Epitaxy $In\,Ga\,As\,P/In\,P$ from the migrating limited liquid-phase volume”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985), 961–968 |
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1984 |
| 26. |
S. Yu. Karpov, S. A. Nikishin, E. L. Portnoĭ, D. V. Sinyavskii, “DIFFUSION SUBSTANCE TRANSFER IN CRYSTALLIZED MULTI-COMPONENT
SOLUTION-FUSION”, Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984), 2004–2010 |
| 27. |
S. A. Nikishin, “NEW SOLUTIONS AND APPLICATIONS IN ELECTRO-LIQUID EPITAXY .2.”, Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984), 1128–1132 |
| 28. |
S. A. Nikishin, “NEW SOLUTIONS AND APPLICATIONS OF ELECTRO-LIQUID EPITAXY .1.”, Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984), 938–942 |
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1983 |
| 29. |
S. A. Nikishin, “ANALYSIS OF MASS-TRANSFER DURING GALLIUM-ARSENIDE ELECTRIC-LIQUID
EPITAXY”, Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983), 538–544 |
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