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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
T. V. Torchinskaya, T. G. Berdinskikh, O. D. Smiyan, “Природа нестабильности свечения в светоизлучающих
CaP : N-структурах”, Fizika i Tekhnika Poluprovodnikov, 26:3 (1992), 454–460  |
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1991 |
| 2. |
T. V. Torchinskaya, V. A. Vorotinskii, Z. S. Abdullaev, M. K. Sheĭnkman, “KINETICS OF DEGRADATION OF RED ALGAAS LIGHT-EMITTING-DIODES”, Zhurnal Tekhnicheskoi Fiziki, 61:2 (1991), 98–103 |
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1990 |
| 3. |
T. V. Torchinskaya, A. G. Karabaev, M. K. Sheĭnkman, “Инжекционно-стимулированная трансформация спектров люминесценции
зеленых GaP : N-светодиодов”, Fizika i Tekhnika Poluprovodnikov, 24:8 (1990), 1337–1348 |
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1989 |
| 4. |
T. V. Torchinskaya, T. G. Berdinskikh, A. G. Karabaev, O. D. Smiyan, A. A. Trofimov, V. A. Denisyuk, B. I. Vishnevskaya, L. M. Kogan, “DEGRADATION OF GREEN GAP-N LIGHT-RADIATING DIODES AND FACTORS EFFECTING
THIS DEGRADATION”, Zhurnal Tekhnicheskoi Fiziki, 59:11 (1989), 134–138 |
| 5. |
T. V. Torchinskaya, Z. S. Abdullaev, “CAUSES OF DEGRADATION OF ELECTROLUMINESCENCE OF RED ALGAAS-GAAS
HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 59:7 (1989), 175–178 |
| 6. |
B. I. Lev, T. V. Torchinskaya, P. M. Tomchuk, M. K. Sheĭnkman, “Кинетика инжекционно-стимулированного преобразования дефектов
в светоизлучающих GaAs : Si-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:9 (1989), 1529–1538 |
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1988 |
| 7. |
T. V. Torchinskaya, A. G. Karabaev, Z. S. Abdullaev, A. A. Shmatov, M. K. Sheĭnkman, “CERTAIN CAUSES OF INSTABILITY OF GAP-N LIGHTDIODES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1710–1716 |
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1987 |
| 8. |
T. V. Torchinskaya, M. K. Sheĭnkman, “Dependence of kinetics of light-diode $Ga\,P:N$, $Zn-O$ degradation on the intensity of red band luminescence”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1221–1227 |
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1986 |
| 9. |
T. V. Torchinskaya, A. A. Shmatov, V. I. Strochkov, M. K. Sheĭnkman, “Transformation of Deep Centers during Degradation of GaP$\langle$N, Zn$-$O$\rangle$ Light-Emitting Diodes”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 701–707 |
| 10. |
A. P. Zdebskii, V. L. Korchnaya, T. V. Torchinskaya, M. K. Sheĭnkman, “$In\,Ga\,As:Si$ lightdiode electric and luminescent characteristic transformation, stimulated by ultrasound”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:2 (1986), 76–81 |
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1985 |
| 11. |
T. V. Torchinskaya, G. N. Semenova, T. G. Berdinskikh, “Low-dose effect and degradation stability of $In_x\,Ga_{1-x}\,As:Si$ light-radiating diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:18 (1985), 1114–1118 |
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1984 |
| 12. |
T. V. Torchinskaya, E. Y. Brailovskii, G. N. Semenova, L. A. Matveeva, M. A. Mirzazhanov, T. G. Berdinskikh, I. B. Puzin, N. Arias, “Избыточные токи и структурные дефекты
в In$_{x}$Ga$_{1-x}$As : Si-светодиодах”, Fizika i Tekhnika Poluprovodnikov, 18:8 (1984), 1397–1402 |
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