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Publications in Math-Net.Ru |
Citations |
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1990 |
| 1. |
B. M. Askerov, B. I. Kuliev, M. M. Panakhov, M. È. Raikh, “Подвижность электронов и термоэдс полупроводниковой сверхрешетки при
рассеянии на фононах”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2211–2214  |
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1988 |
| 2. |
M. È. Raikh, Al. L. Efros, “Exciton line broadening in a semimagnetic semiconductor”, Fizika Tverdogo Tela, 30:6 (1988), 1708–1717 |
| 3. |
E. A. Avrutin, M. È. Raikh, “LOCALIZATION OF LONGITUDINAL MODES ON HETEROGENEITIES IN RESONATOR WITH
DISTRIBUTED FEEDBACK”, Zhurnal Tekhnicheskoi Fiziki, 58:10 (1988), 1924–1932 |
| 4. |
M. È. Raikh, I. M. Ruzin, B. I. Shklovskii, “Влияние локализованных состояний в барьере на флуктуационный
туннельный ток через контакт металл–полупроводник”, Fizika i Tekhnika Poluprovodnikov, 22:11 (1988), 1979–1985 |
| 5. |
M. È. Raikh, I. M. Ruzin, “Мезоскопическое поведение поперечной прыжковой проводимости аморфной
пленки”, Fizika i Tekhnika Poluprovodnikov, 22:7 (1988), 1262–1272 |
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1987 |
| 6. |
A. V. Tartakovskii, M. V. Fistul, M. È. Raikh, I. M. Ruzin, “Hopping Conduction in Metal–Semiconductor–Metal Contacts”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 603–608 |
| 7. |
M. È. Raikh, I. M. Ruzin, “Temperature Dependence of Fluctuation Excess Currents through the Metal–Semiconductor Contact”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 456–460 |
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1986 |
| 8. |
V. L. Nguen, M. È. Raikh, A. L. Efros, “Low temperature density of states in a gapless semiconductor in the vicinity of the Fermi level”, Fizika Tverdogo Tela, 28:7 (1986), 2019–2022 |
| 9. |
M. È. Raikh, A. L. Efros, “The resonance scattering and low-temperature electron mobility in $\mathrm{HgTe}$-based gapless solid solutions”, Fizika Tverdogo Tela, 28:5 (1986), 1307–1316 |
| 10. |
M. È. Raikh, A. Efros, “Impurity band structure in gapless compounds of $\mathrm{Cd}_x\mathrm{Hg}_{1-x}\mathrm{Te}$ type”, Fizika Tverdogo Tela, 28:1 (1986), 208–217 |
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1985 |
| 11. |
M. È. Raikh, I. M. Ruzin, “Fluctuation Mechanism of Excess Tunnel Currents in Back-Biased $p{-}n$ Junctions”, Fizika i Tekhnika Poluprovodnikov, 19:7 (1985), 1217–1225 |
| 12. |
N. N. Ablyazov, M. È. Raikh, “Fluctuation Model of Gapless-Semiconductor–Semiconductor Transition under Uniform Compression”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 237–243 |
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1984 |
| 13. |
M. È. Raikh, A. Efros, “Elastic deformation effect on interaction of electrons with composition fluctuations in solid solutions”, Fizika Tverdogo Tela, 26:5 (1984), 1508–1510 |
| 14. |
M. È. Raikh, Al. L. Efros, “Broadening of diamagnetic exciton line in solid solutions”, Fizika Tverdogo Tela, 26:1 (1984), 106–113 |
| 15. |
V. N. Gusyatnikov, M. È. Raikh, “Effect of Impurity-Concentration Fluctuations
on the Height and Tunnel Transparency of the Barrier”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1077–1084 |
| 16. |
N. N. Ablyazov, M. È. Raikh, “Fluctuation Model of a Gapless Semiconductor with Kane Spectrum”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984), 883–891 |
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1983 |
| 17. |
N. N. Ablyazov, M. È. Raikh, A. Efros, “Exciton absorption linewidth in solid solutions”, Fizika Tverdogo Tela, 25:2 (1983), 353–358 |
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