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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
S. V. Ordin, Yu. V. Zhilyaev, V. V. Zelenin, V. N. Panteleev, “Local thermoelectric effects in wide-gap semiconductors”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 921–924   ; Semiconductors, 51:7 (2017), 883–886 |
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2016 |
| 2. |
Yu. V. Zhilyaev, V. V. Zelenin, E. N. Mokhov, S. S. Nagalyuk, N. K. Poletaev, A. P. Skvortsov, “Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 91–96 ; Tech. Phys. Lett., 42:2 (2016), 156–159 |
1
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1991 |
| 3. |
A. V. Akimov, Yu. V. Zhilyaev, V. V. Krivolapchuk, N. K. Poletaev, V. G. Shofman, “Экспериментальное наблюдение дырок в $n$-GaAs, высвободившихся
в результате оже-распада локализованных состояний”, Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 713–717 |
| 4. |
T. V. Esipova, Yu. V. Zhilyaev, A. G. Kechek, N. I. Kuznetsov, G. R. Markaryan, M. G. Mynbaeva, “CAAS EPITAXIAL LAYERS WITH BACKGROUND ACCEPTOR ALLOYING”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991), 28–32 |
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1990 |
| 5. |
Yu. V. Zhilyaev, V. V. Rossin, T. V. Rossina, V. V. Travnikov, “Resonance exciton luminescence of $\mathrm{GaAs}$: transition from the polariton model to approximation of independent excitons and photons”, Fizika Tverdogo Tela, 32:6 (1990), 1801–1805 |
| 6. |
Yu. V. Zhilyaev, R. N. Kyutt, I. P. Nikitina, “COMPOSITION STOICHIOMETRY IN GAAS FILMS GROWN BY THE GAS-PHASE EPITAXY
METHOD”, Zhurnal Tekhnicheskoi Fiziki, 60:11 (1990), 201–203 |
| 7. |
Yu. V. Zhilyaev, I. P. Ipatova, A. Y. Kulikov, Yu. N. Makarov, O. P. Chikalova-Luzina, “ANALYSIS OF THE GAS-PHASE COMPOSITION IN THE SOURCE ZONE BY THE UV
ABSORPTION UNDER THE GAAS GROWING IN THE CHLORIDE GAS-TRANSPORT SYSTEM”, Zhurnal Tekhnicheskoi Fiziki, 60:7 (1990), 143–150 |
| 8. |
V. L. Dostov, Yu. V. Zhilyaev, I. P. Ipatova, A. Y. Kulikov, “EFFECT OF SUBSTRATE EXCHANGE WITH GAS-PHASE ON CRYSTALLIZATION FROM A
GAS-TRANSPORT SYSTEM”, Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990), 90–96 |
| 9. |
Yu. V. Zhilyaev, V. V. Krivolapchuk, N. Nazarov, I. P. Nikitina, N. K. Poletaev, D. V. Sergeev, V. V. Travnikov, L. M. Fedorov, “Низкотемпературная фотолюминесценция эпитаксиальных пленок фосфида
галлия, выращенных на кремниевых подложках”, Fizika i Tekhnika Poluprovodnikov, 24:7 (1990), 1303–1305 |
| 10. |
A. V. Akimov, Yu. V. Zhilyaev, V. V. Krivolapchuk, V. G. Shofman, “Перезахват неосновных носителей в условиях фотоионизации
в эпитаксиальном $n$-GaAs”, Fizika i Tekhnika Poluprovodnikov, 24:1 (1990), 82–92 |
| 11. |
V. L. Dostov, Yu. V. Zhilyaev, I. P. Ipatova, A. Y. Kulikov, “OPTIMIZATION OF THE MODE OF GALLIUM-ARSENIDE GROWTH IN CHLORIDE
GAS-TRANSPORT SYSTEM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:24 (1990), 77–82 |
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1988 |
| 12. |
A. D. Bykhovskii, Yu. V. Zhilyaev, I. P. Ipatova, A. Y. Kulikov, Yu. N. Makarov, “MATHEMATICAL-MODELING OF PROCESSES IN CHLORIDE GAS-TRANSPORT REACTORS”, Zhurnal Tekhnicheskoi Fiziki, 58:6 (1988), 1229–1233 |
| 13. |
Yu. V. Zhilyaev, V. V. Rossin, T. V. Rossina, V. V. Travnikov, “Использование спектров поляритонной люминесценции
для характеристики качества кристаллов GaAs”, Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1885–1888 |
| 14. |
S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “Исследование субнаносекундного включения арсенид-галлиевых
тиристорных структур”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1134–1137 |
| 15. |
S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “VISUALIZATION OF THE SUBNANOSECOND SWITCHING OF ARSENIDE-GALLIUM-DIODE
STRUCTURES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:16 (1988), 1526–1530 |
| 16. |
A. S. Ardzhanov, S. N. Vainshtein, Yu. V. Zhilyaev, M. V. Zaks, N. I. Kuznetsov, A. B. Slutskii, V. Y. Stoyanovskii, V. E. Chelnokov, “HIGH-VOLTAGE ARSENIDE-GALLIUM FORCE DIODES OF LARGE SQUARE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988), 1153–1156 |
| 17. |
V. M. Botnaryk, Yu. V. Zhilyaev, A. G. Kechek, N. I. Kuznetsov, A. A. Lebedev, M. I. Shulga, “PREDOMINANT RECOMBINATION CENTERS IN PARA-GAAS LAYERS, OBTAINED BY
PRECIPITATION FROM THE GAS-PHASE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988), 181–185 |
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1987 |
| 18. |
V. G. Golubev, Yu. V. Zhilyaev, V. I. Ivanov-Omskii, G. R. Markaryan, A. V. Osutin, V. E. Chelnokov, “Photoelectric Laser Magnetospectroscopy of Shallow Donors in Highly Pure GaAs”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1771–1777 |
| 19. |
S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “Propagation of Switched State in Gallium-Arsenide Thyristors”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 129–133 |
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1986 |
| 20. |
Yu. V. Zhilyaev, G. R. Markaryan, V. V. Rossin, T. V. Rossina, V. V. Travnikov, “Polariton luminescence in $\mathrm{GaAs}$”, Fizika Tverdogo Tela, 28:9 (1986), 2688–2695 |
| 21. |
V. M. Botnaryk, Yu. V. Zhilyaev, V. V. Rossin, T. V. Rossina, V. V. Travnikov, “Intensity excitation effect on polariton luminescence in $\mathrm{GaAs}$”, Fizika Tverdogo Tela, 28:1 (1986), 201–207 |
| 22. |
S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “COMPARATIVE INVESTIGATION OF THE SWITCHING ON PROCESSES OF
GALLIUM-ARSENIDE AND SILICON THYRISTORS”, Zhurnal Tekhnicheskoi Fiziki, 56:7 (1986), 1343–1347 |
| 23. |
O. A. Belyaeva, S. N. Vainshtein, Yu. V. Zhilyaev, Yu. V. Levinshtein, V. E. Chelnokov, “Subnanosecond connection of arsenide-gallium thyristors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:15 (1986), 925–928 |
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1984 |
| 24. |
A. G. Astafurov, S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, V. E. Chelnokov, “SWITCHED ON STATE PROPAGATION IN GAAS THYRISTORS OF THE LARGE AREA”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984), 1430–1433 |
| 25. |
V. M. Botnaryk, S. N. Vainshtein, Yu. V. Zhilyaev, M. E. Levinshteĭn, “HIGH-POWER, HIGH-SPEED COMMUTATORS BASED ON GAAS DINISTOR STRUCTURES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984), 385–388 |
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1983 |
| 26. |
S. N. Vainshtein, I. I. Diakonu, Yu. V. Zhilyaev, M. E. Levinshteĭn, “MAIN PARAMETERS OF SWITCHING-ON OF ARSENIDE-GALLIUM THYRISTORS”, Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983), 573–575 |
| 27. |
S. N. Vainshtein, I. I. Diakonu, Yu. V. Zhilyaev, M. E. Levinshteĭn, “Распространение включенного состояния в арсенидгаллиевых тиристорах”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:9 (1983), 546–549 |
| 28. |
G. A. Ashkinazi, Yu. V. Zhilyaev, V. E. Chelnokov, M. I. Shulga, “Силовые диоды с барьером Шоттки
на арсениде галлия”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983), 414–417 |
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