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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
S. V. Mikhailovich, A. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov, “Low-energy defectless dry etching of the AlGaN/AlN/GaN HEMT barrier layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 61–67   ; Tech. Phys. Lett., 44:5 (2018), 435–437 |
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1996 |
| 2. |
V. G. Mokerov, Yu. V. Fedorov, A. V. Guk, Yu. V. Khabarov, “Optical properties of the two-dimentional electron gas in the $\mathrm{N}$–$\mathrm{AlGaAs}/\mathrm{GaAs}$ heterostructures”, Dokl. Akad. Nauk, 348:5 (1996), 608–610 |
| 3. |
Yu. V. Gulyaev, V. G. Mokerov, A. V. Guk, Yu. V. Fedorov, Yu. V. Khabarov, “Photoluminescence of the three-dimensional and two-dimensional carries in the
$\mathrm{N}$–$\mathrm{AlGaAs}/\mathrm{GaAs}$-heterostructures”, Dokl. Akad. Nauk, 348:1 (1996), 42–44 |
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1993 |
| 4. |
V. G. Mokerov, B. K. Medvedev, I. N. Kotel’nikov, Yu. V. Fedorov, “Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping”, Dokl. Akad. Nauk, 332:5 (1993), 575–577 |
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