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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
R. P. Komirenko, S. V. Litvinenko, V. A. Skryshevsky, V. I. Strikha, Ya. Kochka, I. Stukhlik, “Структуры $a$-Si : H/Si с перестраиваемой областью спектральной
чувствительности”, Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 2034–2037  |
| 2. |
Yu. V. Vorob'ev, V. N. Zakharchenko, S. S. Kil'chitskaya, R. P. Komirenko, V. A. Skryshevsky, V. I. Strikha, “Неаддитивность и неустойчивость фототока квазиоднородных пленок
аморфного кремния”, Fizika i Tekhnika Poluprovodnikov, 25:2 (1991), 334–336 |
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1990 |
| 3. |
V. A. Skryshevsky, S. V. Litvinenko, V. I. Strikha, “Датчик электронов на основе кремниевого барьера Шоттки со слоем
туннельно-прозрачного диэлектрика”, Fizika i Tekhnika Poluprovodnikov, 24:10 (1990), 1886–1888 |
| 4. |
A. M. Voskoboinikov, V. V. Smolyar, V. A. Skryshevsky, V. I. Strikha, “Зависимость эффективной высоты потенциального барьера в М$-$ТД$-$П
структурах при инфракрасной подсветке”, Fizika i Tekhnika Poluprovodnikov, 24:3 (1990), 413–417 |
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1989 |
| 5. |
V. S. L'vov, V. I. Strikha, Tretyak, A. A. Shmatov, “Intercenter carrier transitions in partially disordered silicon: experiment and discussion of results”, Fizika Tverdogo Tela, 31:11 (1989), 206–213 |
| 6. |
V. S. L'vov, V. I. Strikha, Tretyak, A. A. Shmatov, “Intercenter carrier transitions in partially disordered silicon: calculation”, Fizika Tverdogo Tela, 31:11 (1989), 197–205 |
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1988 |
| 7. |
N. G. Kuvshinskii, V. M. Komko, I. I. Lyashko, N. G. Nakhodkin, V. I. Strikha, “The phenomenon of two-stage photogeneration of current carriers in exciplexes”, Dokl. Akad. Nauk SSSR, 302:4 (1988), 839–841 |
| 8. |
V. I. Strikha, V. V. Ilchenko, M. M. Mezdrogina, A. A. Andreev, “Электрофизические свойства контактов с барьером Шоттки
на аморфном гидрированном кремнии”, Fizika i Tekhnika Poluprovodnikov, 22:3 (1988), 461–464 |
| 9. |
V. L. Vinetskii, M. A. Manoilo, A. S. Matviichuk, V. I. Strikha, G. A. Kholodar, “IONIZATION STIMULATION RECONSTRUCTION OF DEFECTS IN SILICON”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988), 2017–2021 |
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1987 |
| 10. |
N. G. Kuvshinskii, I. I. Lyashko, N. G. Nakhodkin, V. I. Strikha, V. M. Komko, “Phenomenon of photogeneration efficiency rising in amorphous polymer semiconductors over the range of absorption of the complex with charge transfer”, Dokl. Akad. Nauk SSSR, 294:5 (1987), 1093–1097 |
| 11. |
V. I. Strikha, O. V. Tretyak, A. A. Shmatov, G. M. Mozok, “To the Problem on the Measurement of Capacity Relaxation in the Spectroscopy of Deep Levels”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 653–656 |
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1986 |
| 12. |
Yu. V. Vorob'ev, S. S. Kil'chitskaya, R. P. Komirenko, S. V. Litvinenko, V. A. Skryshevsky, V. I. Strikha, “Effects of Nonadditivity of Photocurrent Excitation in the Contact of Metal-Hydroginated Amorphous Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 661–664 |
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1985 |
| 13. |
F. I. Borisov, Yu. V. Vorob'ev, V. I. Strikha, O. V. Tretyak, A. A. Shmatov, “Study of Spin-Dependent Recombination in the Films of Silicon on Sapphire”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 869–873 |
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1984 |
| 14. |
F. I. Borisov, V. I. Strikha, O. V. Tretyak, A. A. Shmatov, “Спин-зависимая генерация неравновесных носителей заряда”, Fizika i Tekhnika Poluprovodnikov, 18:9 (1984), 1552–1555 |
| 15. |
V. V. Il'chenko, V. I. Strikha, “Current–Voltage Characteristic of the Metal–Amorphous-Silicon Contact for Exponential Distribution of
Localized-State Density”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984), 873–876 |
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