|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
I. E. Tyschenko, M. Voelskow, Si. Zh, V. P. Popov, “Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 217–223   ; Semiconductors, 55:3 (2021), 289–295 |
|
2019 |
| 2. |
A. F. Zinovieva, V. A. Zinovyev, N. P. Stepina, A. V. Katsyuba, A. V. Dvurechenskii, A. K. Gutakovskii, L. V. Kulik, A. S. Bogomyakov, S. B. Erenburg, S. V. Trubina, M. Voelskow, “Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019), 258–264 ; JETP Letters, 109:4 (2019), 270–275   |
| 3. |
I. E. Tyschenko, M. Voelskow, A. N. Mikhaylov, D. I. Tetelbaum, “Diffusion and interaction of In and As implanted into SiO$_2$ films”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1023–1029 ; Semiconductors, 53:8 (2019), 1004–1010 |
3
|
|
2017 |
| 4. |
I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow, “Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1289–1294 ; Semiconductors, 51:9 (2017), 1240–1246 |
1
|
|
| Organisations |
|
| |
|
|
Contact us: