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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
N. P. Stepina, A. O. Bazhenov, A. V. Shumilin, E. Yu. Zhdanov, D. V. Ishchenko, V. V. Kirienko, M. S. Aksenov, O. E. Tereshchenko, “Нелинейный коэффициент Холла в пленках трехмерного топологического изолятора”, Pis'ma v Zh. Èksper. Teoret. Fiz., 120:3 (2024), 208–213  |
| 2. |
D. A. Pokhabov, A. G. Pogosov, A. A. Shevyrin, E. Yu. Zhdanov, A. K. Bakarov, “Conductance quantization features in multichannel quantum point contacts”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:5 (2024), 372–380 ; JETP Letters, 119:5 (2024), 380–388 |
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2023 |
| 3. |
D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, “Scanning of electronic states in a quantum point contact using asymmetrically biased side gates”, Pis'ma v Zh. Èksper. Teoret. Fiz., 117:4 (2023), 299–305 ; JETP Letters, 117:4 (2023), 299–305 |
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2022 |
| 4. |
D. I. Sarypov, D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, “Multiwell potential in a trench-type quantum point contact”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:6 (2022), 350–357 ; JETP Letters, 116:6 (2022), 360–366 |
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2020 |
| 5. |
D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov, A. A. Shklyaev, “Double-channel electron transport in suspended quantum point contacts with in-plane side gates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1344–1349  ; Semiconductors, 54:12 (2020), 1605–1610 |
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2017 |
| 6. |
E. Yu. Zhdanov, A. G. Pogosov, M. V. Budantsev, D. A. Pokhabov, A. K. Bakarov, “Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 12–17 ; Semiconductors, 51:1 (2017), 8–13 |
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2016 |
| 7. |
D. A. Pokhabov, A. G. Pogosov, M. V. Budantsev, E. Yu. Zhdanov, A. K. Bakarov, “Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1070–1074 ; Semiconductors, 50:8 (2016), 1049–1053 |
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2023 |
| 8. |
V. Borovkov, E. Zhdanov, S. Lezhnin, M. Makhmudian, A. Nenashev, E. Pal'chikov, A. Pogosov, D. Pokhabov, G. Fedotovich, “Новосибирский государственные университет”, Kvant, 2023, no. 10, 52–58 |
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2022 |
| 9. |
V. Borovkov, E. Zhdanov, S. Lezhnin, M. Makhmudian, A. Nenashev, E. Pal'chikov, A. Pogosov, D. Pokhabov, G. Fedotovich, “Новосибирский государственный университет”, Kvant, 2022, no. 8, 48–54 |
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2021 |
| 10. |
V. Borovkov, E. Zhdanov, A. Kipriyanov, S. Lezhnin, M. Makhmudian, A. Nenashev, E. Pal'chikov, A. Pogosov, D. Pokhabov, G. Fedotovich, “Новосибирский государственный университет”, Kvant, 2021, no. 11-12, 37–41 |
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2020 |
| 11. |
V. Borovkov, E. Zhdanov, A. Kipriyanov, S. Lezhnin, M. Makhmudian, A. Nenashev, E. Pal'chikov, A. Pogosov, D. Pokhabov, G. Fedotovich, “Новосибирский государственный университет”, Kvant, 2020, no. 10, 46–53 |
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2019 |
| 12. |
V. Borovkov, E. Zhdanov, A. Kipriyanov, S. Lezhnin, M. Makhmudian, A. Nenashev, E. Pal'chikov, A. Pogosov, D. Pokhabov, G. Fedotovich, “Новосибирский государственный
университет”, Kvant, 2019, no. 11, 41–51 |
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2018 |
| 13. |
V. I. Batkin, V. I. Borovkov, E. Yu. Zhdanov, A. Kipriyanov, S. I. Lezhnin, M. M. Makhmudian, A. V. Nenashev, E. I. Pal'chikov, A. G. Pogosov, D. A. Pokhabov, G. V. Fedotovich, “Новосибирский государственный университет”, Kvant, 2018, no. 10, 43–50 |
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2017 |
| 14. |
V. I. Batkin, V. I. Borovkov, V. N. Dubrovsky, E. Yu. Zhdanov, A. Kipriyanov, S. I. Lezhnin, M. M. Makhmudian, A. V. Nenashev, E. I. Pal'chikov, A. G. Pogosov, D. A. Pokhabov, G. V. Fedotovich, “Новосибирский государственный университет”, Kvant, 2017, no. 10, 46–51 |
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