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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
A. E. Voloshin, I. L. Smol'skii, V. N. Rozhanskii, “USE OF ASYMMETRIC EXPOSURES IN PLANAR WAVE X-RAY TOPOGRAPHY FOR THE
STUDY OF MICRODEFECTS IN SILICON-CRYSTALS”, Zhurnal Tekhnicheskoi Fiziki, 62:4 (1992), 171–175  |
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1987 |
| 2. |
I. L. Smol'skii, G. A. Dilbaryan, F. N. Chukhovskii, A. I. Ryskin, V. N. Rozhanskii, “Experimental study and computer simulation of high temperature dislocation images in X-ray section topograms in $\mathrm{Si}$”, Fizika Tverdogo Tela, 29:5 (1987), 1392–1398 |
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1986 |
| 3. |
G. A. Dilbaryan, I. L. Smol'skii, V. N. Rozhanskii, “Direct measurement of the parameters of x-ray dynamic scattering by silicon crystals at elevated temperatures”, Fizika Tverdogo Tela, 28:9 (1986), 2597–2603 |
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1984 |
| 4. |
I. L. Smol'skii, A. A. Chernov, Yu. G. Kuznetsov, V. F. Parvov, V. N. Rozhanskii, “Vicinal sectoriality and its relation to ADP crystal growth kinetics”, Dokl. Akad. Nauk SSSR, 278:2 (1984), 358–361 |
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1981 |
| 5. |
Yu. G. Kuznetsov, I. L. Smol'skii, A. A. Chernov, V. N. Rozhanskii, “Realization of the dislocation free growth of ADP crystals under the X-ray topography control in situ”, Dokl. Akad. Nauk SSSR, 260:4 (1981), 864–867 |
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1979 |
| 6. |
A. A. Chernov, I. L. Smol'skii, V. F. Parvov, Yu. G. Kuznetsov, V. N. Rozhanskii, “Investigation of the growth kinetics of ADP crystals from solution by the “in-situ” method fo X-ray topography”, Dokl. Akad. Nauk SSSR, 248:2 (1979), 356–358 |
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