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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
I. M. Vikulin, V. È. Gorbachev, Sh. D. Kurmashev, “Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1404–1409   ; Semiconductors, 51:10 (2017), 1354–1359 |
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1990 |
| 2. |
Sh. D. Kurmashev, V. I. Irkha, I. M. Vikulin, “Спектр фоточувствительности инжекционных фотодиодов с варизонной
базой в магнитном поле”, Fizika i Tekhnika Poluprovodnikov, 24:3 (1990), 558–560 |
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1986 |
| 3. |
I. I. Sinina, Sh. D. Kurmashev, I. M. Vikulin, “Injection Amplification of Photocurrent in an Inhomogeneously Doped Semiconductor”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2233–2236 |
| 4. |
Sh. D. Kurmashev, I. I. Chalaya, “Effect of Electron Irradiation on Photosensitivity of Ge$\langle$Hg, Sb$\rangle$ Structures with Injection Amplification”, Fizika i Tekhnika Poluprovodnikov, 20:6 (1986), 1134–1136 |
| 5. |
Sh. D. Kurmashev, O. P. Dem'yanchuk, I. I. Chalaya, “Effect of Electron Irradiation on the Characteristics of $p$-InSb Injection Photodiodes”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 927–929 |
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1965 |
| 6. |
V. A. Drozdov, Sh. D. Kurmashev, A. L. Rvachev, “Optical method of forming a $p$ – $n$-transition”, Dokl. Akad. Nauk SSSR, 162:3 (1965), 530–531 |
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