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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
I. E. Gobelko, A. V. Rozhkov, D. N. Dresvyankin, “Metal–insulator transition and other electronic properties of AB-stacked bilayer graphene deposited on a ferromagnetic substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:9 (2023), 689–696  ; JETP Letters, 118:9 (2023), 676–683 |
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2022 |
| 2. |
A. O. Sboychakov, A. V. Rozhkov, A. L. Rakhmanov, “Charge distribution and spin textures in magic-angle twisted bilayer graphene”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:10 (2022), 708–715 ; JETP Letters, 116:10 (2022), 729–736 |
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2021 |
| 3. |
D. N. Dresvyankin, A. V. Rozhkov, A. O. Sboychakov, “Magnetoelectronic instability of graphene on a ferromagnetic substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:12 (2021), 824–832 ; JETP Letters, 114:12 (2021), 763–770   |
2
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2020 |
| 4. |
A. V. Rozhkov, A. O. Sboychakov, D. A. Khokhlov, A. L. Rakhmanov, K. I. Kugel, “New half-metallic states in systems with spin and charge density waves (brief review)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:11 (2020), 764–773  ; JETP Letters, 112:11 (2020), 725–733 |
2
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| 5. |
A. O. Sboychakov, A. V. Rozhkov, K. I. Kugel, A. L. Rakhmanov, “Phase separation in a spin density wave state of twisted bilayer graphene”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:10 (2020), 693–699 ; JETP Letters, 112:10 (2020), 651–656 |
4
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2017 |
| 6. |
A. L. Rakhmanov, K. I. Kugel, M. Yu. Kagan, A. V. Rozhkov, A. O. Sboychakov, “Inhomogeneous electron states in the systems with imperfect nesting”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:12 (2017), 768–779 ; JETP Letters, 105:12 (2017), 806–817 |
16
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1992 |
| 7. |
E. A. Avrutin, V. I. Korol'kov, N. Yu. Yurlov, A. V. Rozhkov, A. M. Sultanov, “Динамические характеристики мощных импульсных
GaAs/AlGaAs-суперлюминесцентных светодиодов”, Fizika i Tekhnika Poluprovodnikov, 26:4 (1992), 719–724 |
| 8. |
V. I. Korol'kov, A. S. Prokhorenko, A. V. Rozhkov, A. M. Sulatanov, “STUDY OF THE SWITCHING STABILITY OF HIGH-VOLTAGE SUBNANOSECOND
PHOTON-INJECTION SWITCHES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:10 (1992), 26–31 |
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1989 |
| 9. |
B. I. Grigorev, V. I. Korol'kov, V. G. Nikitin, D. L. Nugmanov, N. Y. Orlov, A. V. Rozhkov, “CURRENT SHUTOFF OF THE CONTROL OF PHOTON-INJECTION PULSE THYRISTORS
BASED ON HETEROSTRUCTURE”, Zhurnal Tekhnicheskoi Fiziki, 59:2 (1989), 156–158 |
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1988 |
| 10. |
B. I. Grigorev, V. I. Korol'kov, A. V. Rozhkov, “Расчет основных характеристик фотонно-инжекционного импульсного
тиристора на основе гетероструктуры”, Fizika i Tekhnika Poluprovodnikov, 22:3 (1988), 413–418 |
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1987 |
| 11. |
Yu. M. Zadiranov, V. I. Korol'kov, S. I. Ponomarev, A. V. Rozhkov, G. I. Tsvilev, “HIGH-VOLTAGE IMPULSE THYRISTORS ON THE BASIS OF WEAKLY ALLOYED
ARSENIDE-GALLIUM”, Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 771–777 |
| 12. |
B. I. Grigorev, V. I. Korol'kov, M. Nasrulloeva, V. G. Nikitin, A. V. Rozhkov, A. Khalmirzaev, “Study of P-N-structures and P-N-P-N-structures based on nonalloyed gallium-phosphide layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1270–1274 |
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1986 |
| 13. |
B. I. Grigorev, Yu. M. Zadiranov, V. I. Korol'kov, A. V. Rozhkov, “On the Determination of Excess Charge Carrier Lifetime in Lightly Doped $p-$ and $n$-Regions of Photon-Injection Transistors and Thyristors”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1897–1900 |
| 14. |
B. I. Grigorev, Yu. M. Zadiranov, V. I. Korol'kov, A. V. Rozhkov, “Transients Processes in High-Voltage Photon-Injection Transistors Based on Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 677–682 |
| 15. |
Zh. I. Alferov, V. M. Efanov, Yu. M. Zadiranov, A. F. Kardo-Sisoev, V. I. Korol'kov, S. I. Ponomarev, A. V. Rozhkov, “Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986), 1281–1285 |
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1985 |
| 16. |
B. I. Grigorev, V. I. Korol'kov, A. V. Rozhkov, V. S. Yuferev, “High-Voltage Photon-Injection Transistor Based on a Heterostructure”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 878–884 |
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1984 |
| 17. |
V. I. Korol'kov, V. I. Litmanovich, A. V. Rozhkov, M. N. Stepanova, T. S. Tabarov, “ARSENIDEGALLIUM FIELD-EFFECT TRANSISTORS WITH CONTROLLING P-N TRANSIENTS”, Zhurnal Tekhnicheskoi Fiziki, 54:4 (1984), 859–862 |
| 18. |
Yu. M. Zadiranov, V. I. Korol'kov, V. G. Nikitin, A. V. Rozhkov, “POWERFUL IMPULSE TRANSISTORS BASED ON GALLIUM ARSENIDES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984), 976–979 |
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1983 |
| 19. |
S. Gaibullaev, B. V. Egorov, V. I. Korol'kov, A. V. Rozhkov, E. P. Romanova, V. S. Yuferev, “ARSENIDE-GALLIUM TRANSISTORS”, Zhurnal Tekhnicheskoi Fiziki, 53:4 (1983), 763–765 |
| 20. |
V. M. Andreev, Yu. M. Zadiranov, V. I. Korol'kov, A. V. Rozhkov, A. A. Yakovenko, “Исследование транзисторов с оптической связью”, Fizika i Tekhnika Poluprovodnikov, 17:9 (1983), 1618–1622 |
| 21. |
Yu. M. Zadiranov, V. I. Korol'kov, V. G. Nikitin, S. I. Ponomarev, A. V. Rozhkov, “Импульсные тиристоры на основе гетероструктур GaAs$-$AlGaAs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983), 652–655 |
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