In 1969 graduated from Moscow Power Engineering Institute, majoring in Semiconductor Devices. From 1969 to 1991 he worked at the company's electronics industry INSTITUTE «Sapphire». In 1989, has protected the candidate dissertation on a subject «Ion-beam etching in industrial technology of functional elements of VLSI MEMORIES СMD». From 1991 to present, V.A. Kal′nov works in Institute of Russian Academy of Sciences as a senior research officer and, since 1998, the Scientific Secretary FTIAN. Kal′nov, s scientific interests relate to the development and use of technology in microelectronics EUB radiation, development of technology of semiconductor devices and integrated circuits with full dielectric insulation based on silicon membranes, development of high-precision thin film deposition technology for x-ray mirrors, micromechanics technology.

• Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow