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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. V. Privezentsev, A. P. Sergeev, V. S. Kulikauskas, D. A. Kiselev, A. Yu. Trifonov, A. N. Tereshchenko, “Structure, content and properties of Zn and O ion hot implanted silicon”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1376–1382   ; Semiconductors, 54:12 (2020), 1650–1656 |
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2019 |
| 2. |
V. V. Privezentsev, V. S. Kulikauskas, V. A. Skuratov, O. S. Zilova, A. A. Burmistrov, M. Yu. Presniakov, A. V. Goryachev, “Structure and properties of Zn-implanted Si near-surface layer modification depending on irradiation fluence of $^{132}$Xe$^{26+}$ ions with energy of 167 MeV”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 332–339 ; Semiconductors, 53:3 (2019), 313–320 |
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2018 |
| 3. |
V. V. Privezentsev, E. P. Kirilenko, A. V. Goryachev, A. V. Lutzau, “Formation of precipitates in Si implanted with $^{64}$Zn$^{+}$ and $^{16}$O$^{+}$ ions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 827–835 ; Semiconductors, 52:8 (2018), 961–968 |
| 4. |
V. V. Privezentsev, A. V. Makunin, A. A. Batrakov, S. V. Ksenich, A. V. Goryachev, “Nanoparticle formation in Zn$^{+}$ and O$^{+}$ ion sequentially implanted SiO$_{2}$ film”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 521 ; Semiconductors, 52:5 (2018), 645–650 |
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2017 |
| 5. |
V. V. Privezentsev, E. P. Kirilenko, A. N. Goryachev, A. A. Batrakov, “Study of silicon doped with zinc ions and annealed in oxygen”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 187–192 ; Semiconductors, 51:2 (2017), 178–183 |
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1979 |
| 6. |
M. N. Ivanovskii, V. V. Privezentsev, V. P. Sorokin, B. A. Chulkov, “О непрерывности потока жидкости в артериях тепловых труб”, TVT, 17:2 (1979), 409–416 |
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1977 |
| 7. |
M. N. Ivanovskii, V. P. Sorokin, V. V. Privezentsev, “Влияние количества теплоносителя на работу тепловых труб с неоднородной капиллярной структурой
при отсутствии массовых сил”, TVT, 15:4 (1977), 873–878 |
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1975 |
| 8. |
V. I. Subbotin, M. N. Ivanovskii, V. P. Sorokin, V. V. Privezentsev, A. I. Strozhkov, “Loss of efficiency of heat pipes due to vapor and vapor-gas bubbles”, TVT, 13:6 (1975), 1225–1230 ; High Temperature, 13:6 (1975), 1132–1136 |
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