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Institute for Design Problems in Microelectronics of Russian Academy of Sciences, Moscow, Russia
Address: Russia, 124681, Moscow, Sovetskaya, 3
Phone: +7 (499) 729 98 90, +7 (499) 729 93 23
E-mail:
Website: https://www.ippm.ru
Number of persons: 25
Number of authors: 31
Number of publications: 33

Personnel: C G K L O R S T U Z
full list
  • Okunev, Anatolii Semenovich
  • Olenin, Anatoly Stepanovich
  • Ostrovskaya, Natalia Vladimirovna
  • The Institute for Design Problems in Microelectronics of the Russian Academy of Science created in 1986 and is a part of Branch of Informatics, Computer equipment and Automatization of RAS.

    The basic purpose of Institute is execution of fundamental scientific researches and applied developments in the field of automatization of designing nano- and microelectronic systems and devices.

    The main directions of scientific activity of Institute are:

    • the CAD systems in micro- and nanoelectronics,
    • development of high-efficiency microelectronic computing systems,
    • designing of perspective devices and integrated circuits of micro- and nanoelectronics.

    Source: https://www.ippm.ru/index.php?ls=en
     
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